Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Junichi Shike"'
Publikováno v:
Journal of the Vacuum Society of Japan. 57:96-101
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19dfd3702ccc124e084d3f0fc64f643c
https://doi.org/10.3131/jvsj2.57.96
https://doi.org/10.3131/jvsj2.57.96
Publikováno v:
Vacuum. 84:756-759
Development of a high-speed pumping system for ultra high vacuum (UHV) process dose not reduce only cost and waiting time for experiment and production, but also reduces CO 2 emission that is known as one of the serious causes in the global warming p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2e08664636fcf732d527549a807a709
https://doi.org/10.1016/j.vacuum.2009.10.001
https://doi.org/10.1016/j.vacuum.2009.10.001
Autor:
Hideyuki Murata, Yoshiki Kinoshita, Junichi Shike, Takeshi Ikeda, Masahiro Kitano, Yoshikazu Ikeda
Publikováno v:
Chemical Physics Letters. 426(1-3):111-114
Studies on the intrinsic degradation of organic light-emitting devices (OLEDs) based on tris(8-hydroxyquinolinolato)aluminum (III) (Alq3) revealed that the operation stability of the OLEDs depends on the process pressure during device fabrication. Lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::850256e2e8d2afcb7cb87bc10a59d272
http://hdl.handle.net/10119/4934
http://hdl.handle.net/10119/4934
Autor:
K. Ishida, Kiyoshi Takahashi, Junichi Shike, Noritaka Tanaka, Atsushi Shigemori, Masamichi Ouchi, Ryuhei Kimura
Publikováno v:
physica status solidi (c). 1:2454-2457
The effects of the nitridation process on cubic GaN film quality grown on AlGaAs buffer layer by plasma assisted molecular beam epitaxy were investigated. When 10 seconds of nitridation was applied on AlGaAs buffer layer, the surface became very smoo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::354acacc4ed20e284fb66cb139fbb1af
https://doi.org/10.1002/pssc.200404987
https://doi.org/10.1002/pssc.200404987
Publikováno v:
Journal of Crystal Growth. 251:455-459
We demonstrate cubic GaN film growth using a newly developed AlN/GaN ordered alloy grown on GaAs (1 0 0) by plasma assisted molecular beam epitaxy. A significant improvement in crystal quality was achieved by reducing the nitridation time in the init
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::064ff82de3521e946868720229a9d7ba
https://doi.org/10.1016/s0022-0248(02)02284-4
https://doi.org/10.1016/s0022-0248(02)02284-4
Publikováno v:
physica status solidi (c). :170-174
Cubic GaN films were grown on GaAs (100) using a newly introduced AlN/GaN ordered alloy fabricated by plasma-assisted molecular beam epitaxy. Dominant cubic GaN growth was confirmed by in situ reflection high-energy electron diffraction observations,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df1c892c7f53f8a9626fe3fac5fc77fb
https://doi.org/10.1002/pssc.200390015
https://doi.org/10.1002/pssc.200390015
Publikováno v:
MRS Proceedings. 743
High quality cubic GaN films were successfully grown on an AlN/GaN ordered alloy by RF-MBE. AlN/GaN ordered alloy is here employed instead of a AlGaN nucleation layer formed by nitridation of an AlGaAs buffer layer. Dominant cubic GaN epilayer (1.0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fb3b934915a22477cd8b302c1d24f99
https://doi.org/10.1557/proc-743-l3.28
https://doi.org/10.1557/proc-743-l3.28