Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Junichi Nishinaka"'
Autor:
Toshihiko Fukamachi, Junichi Nishinaka, Koichi Naniwae, Shuichi Usuda, Haruki Fukai, Akihiko Sugitani, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama
Publikováno v:
Applied Physics Express, Vol 17, Iss 5, p 052004 (2024)
We have developed a GaN-based distributed feedback laser diode (DFB-LD) with the detuning of +5 nm to obtain a smaller temperature dependence of the threshold current. We found that the current-light characteristics almost overlapped up to 300 mW bet
Externí odkaz:
https://doaj.org/article/2ae0e891c5564c379567699d14687ffa
Publikováno v:
physica status solidi (b). 253:78-83
The crystal growth and optical properties of semipolar (112¯2) InGaN/AlGaN stress-compensated superlattices (SCSLs) are investigated. X-ray diffraction and transmission electron microscopy reveal that appropriately designed 125-period In0.2Ga0.8N (1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aeff76a9461edc54fc6d1d6019b7087d
https://doi.org/10.1002/pssb.201552336
https://doi.org/10.1002/pssb.201552336
Publikováno v:
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3ad9bdf7a95a72fe81243ff0a8b582a
https://doi.org/10.7567/ssdm.2017.g-2-04
https://doi.org/10.7567/ssdm.2017.g-2-04
Publikováno v:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
We investigated the surface morphologies of nonpolar m-plane AlN homoepitaxial layers grown by the flow-rate modulation epitaxy (FME) method. As source supply sequences, we adopted conventional metal-organic chemical vapor deposition (MOCVD) and thre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::356500a56727c957564f57d212e7a2ae
https://doi.org/10.1109/iciprm.2016.7528771
https://doi.org/10.1109/iciprm.2016.7528771
Autor:
Takaaki Kakitsuka, Shinji Matsuo, Koichi Hasebe, Junichi Nishinaka, Tsuyoshi Yamamoto, Koji Takeda, Takuro Fujii
Publikováno v:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
We designed and fabricated lateral-current-injection (LCI) Fabry-Perot (FP) lasers for the 1.3-µm wavelength region. The devices were fabricated using selective doping by means of thermal diffusion and ion implantation to make pn junctions. To incre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe37868469c7f4508f72eaab9ad4723f
https://doi.org/10.1109/iciprm.2016.7528753
https://doi.org/10.1109/iciprm.2016.7528753
Publikováno v:
Japanese Journal of Applied Physics. 57:04FH09
We studied hole generation in Mg-doped AlN/Al0.75Ga0.25N superlattices (SLs) with an average Al content of 0.8. High hole concentrations on the order of 1018 cm−3 were obtained in the SLs. The temperature dependence of the hole concentration indica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3008f6d4fd45ecc3bd6cefc9574b7d20
https://doi.org/10.7567/jjap.57.04fh09
https://doi.org/10.7567/jjap.57.04fh09
Publikováno v:
physica status solidi (b). 254:1770208
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efabb9472726060ffb4ae83e844e0a71
https://doi.org/10.1002/pssb.201770208
https://doi.org/10.1002/pssb.201770208
Publikováno v:
physica status solidi (b). 254:1600545
We investigate the surface morphologies of nonpolar m-plane AlN homoepitaxial layers grown by flow-rate modulation epitaxy (FME). As source supply sequences, we employ a continuous supply and three types of FME: group-III-source FME, group-V-source F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::109288261c7ec4fa3a55771041d1b3fb
https://doi.org/10.1002/pssb.201600545
https://doi.org/10.1002/pssb.201600545
Publikováno v:
Journal of Applied Physics. 112(3)
We investigate anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple quantum wells(MQWs).Transmission electron microscopy analyses of semipolar (11{2¯}2)MQWs reveal that lattice relaxation preferentially occurs along the [{1¯}{1¯}23] di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65a75aab2a2717e0fccb33246eb0981e
http://hdl.handle.net/2433/187967
http://hdl.handle.net/2433/187967
Publikováno v:
Applied Physics Letters. 106:082105
We compare metalorganic vapor phase epitaxy of InGaN/GaN heterostructures on semipolar (112¯2) and (1¯1¯22¯) GaN bulk substrates. In incorporation efficiency is higher for (112¯2) InGaN, which enables higher temperature growth of InGaN and is be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::632975ca4ac1aa5aac24e6c378fdcddf
https://doi.org/10.1063/1.4913263
https://doi.org/10.1063/1.4913263