Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Junhui Die"'
Autor:
Mingxiao Zhang, Fumin Qiu, Zhao Qiao, Qiang Zhou, Yunti Pu, Bingcheng Xiong, Junhui Die, Liang Lv, Ping Ma
Publikováno v:
Frontiers in Physics, Vol 10 (2022)
High-repetition rate laser-induced damage of Ta2O5:SiO2 coatings was investigated at 355 nm wavelength and a repetition rate of 30 kHz. Laser-induced damage thresholds of coatings with different mixture ratios were measured. The relationships between
Externí odkaz:
https://doaj.org/article/c71bd4167c194b1eb2a31160834f78af
Publikováno v:
Ceramics International. 48:2670-2676
Vacuum-air-shift causes trouble to conventional electron beam evaporation (EBE) coatings. This study compares the protection effect of ion assistance and the ALD (atomic layer deposition) Al2O3 capping layer. The vacuum-air-shift was reproduced on an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef65afdbd6b0a7a9e8d6857987651359
https://doi.org/10.1016/j.ceramint.2021.10.051
https://doi.org/10.1016/j.ceramint.2021.10.051
Autor:
Yimeng Song, Huiyun Wei, Qianming Huang, Mingzeng Peng, Yangfeng Li, Yingfeng He, Peng Qiu, Zhiquan He, Xinhe Zheng, Junhui Die
Publikováno v:
Crystal Growth & Design. 21:1778-1785
GaN thin films have been directly grown on monolayer MoS2 by plasma-enhanced atomic layer deposition at 260 °C using triethylgallium as the gallium precursor along with Ar/N2/H2 plasma for the firs...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9746b0f4804b44709eb69a8325981d02
https://doi.org/10.1021/acs.cgd.0c01650
https://doi.org/10.1021/acs.cgd.0c01650
Autor:
Junhui Die, Zhao Qiao, Fumin Qiu, Yunti Pu, Liang Lv, Bingcheng Xiong, Ping Ma, Mingxiao Zhang
Publikováno v:
Eighth Symposium on Novel Photoelectronic Detection Technology and Applications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09bee4432a7d036e4ce42435d04dae3f
https://doi.org/10.1117/12.2624921
https://doi.org/10.1117/12.2624921
Publikováno v:
Optics & Laser Technology. 157:108645
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34e3aea86a6f480c2dbcf3fbc763a1c3
https://doi.org/10.1016/j.optlastec.2022.108645
https://doi.org/10.1016/j.optlastec.2022.108645
Autor:
H. S. Chen, Haiqiang Jia, Yang Jiang, Chunhua Du, Wenxin Wang, Lu Wang, Caiwei Wang, Xiaotao Hu, Shen Yan, Ziguang Ma, Wei Hu, Zhen Deng, Junhui Die
Publikováno v:
Superlattices and Microstructures. 130:215-220
Nonpolar (11–20) a-plane GaN films with AlN nucleation layer were grown on (10–12) r-plane sapphire substrate by metal organic chemical vapor deposition (MOCVD). The crystalline and surface qualities of a-plane GaN were found to closely depend on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7509028cc59a756c9c549a74cecff71e
https://doi.org/10.1016/j.spmi.2019.04.031
https://doi.org/10.1016/j.spmi.2019.04.031
Autor:
H. S. Chen, Haiqiang Jia, Xiaotao Hu, Junhui Die, Shen Yan, Caiwei Wang, Yang Jiang, Ziguang Ma, Zhen Deng, Wei Hu
Publikováno v:
CrystEngComm. 21:2747-2753
The characteristics of a-plane GaN films directly grown on silicon dioxide (SiO2) hole-array patterned r-sapphire substrates (HPSS) were investigated in this work. Various pattern sizes of SiO2 HPSS were prepared to obtain fully coalescent a-plane Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c046aaee1f825ce4e555b270a8ec072
https://doi.org/10.1039/c8ce01988f
https://doi.org/10.1039/c8ce01988f
Autor:
Ziguang Ma, Zhen Deng, H. S. Chen, Haiqiang Jia, Xiaotao Hu, Chunhua Du, Shen Yan, Caiwei Wang, Junhui Die, Yang Jiang
Publikováno v:
CrystEngComm. 21:5124-5128
We studied the non-polar a-plane GaN directly grown on an SiO2 stripe-patterned r-plane sapphire substrate along the [0001] crystallographic direction of GaN. The XRC-FWHM values of the optimized a-plane GaN were 386 arcsec along the c-axis and 289 a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::682df2b98c247de04c42fb1ffbd53b7f
https://doi.org/10.1039/c9ce00995g
https://doi.org/10.1039/c9ce00995g
Autor:
Yunti Pu, Pengfei Kong, Ping Ma, Liang Lv, Qiang Zhou, Mingxiao Zhang, Zhongwen Lu, Zhao Qiao, Junhui Die, Fuming Qiu
Publikováno v:
Optics & Laser Technology. 151:108074
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0efdc69d74be2bb0ed45061539c317b1
https://doi.org/10.1016/j.optlastec.2022.108074
https://doi.org/10.1016/j.optlastec.2022.108074
Publikováno v:
Optical Materials. 125:111894
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e129fbcbac9b865a1690a861d87346f
https://doi.org/10.1016/j.optmat.2021.111894
https://doi.org/10.1016/j.optmat.2021.111894