Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Junhua lai"'
Publikováno v:
AIP Advances, Vol 8, Iss 5, Pp 055131-055131-7 (2018)
Ultra-low pressure application of Pirani gauge needs significant improvement of sensitivity and expansion of measureable low pressure limit. However, the performance of Pirani gauge in high vacuum regime remains critical concerns since gaseous therma
Externí odkaz:
https://doaj.org/article/15f23e976582415182a9a2adafbff39a
Publikováno v:
IEEE Electron Device Letters. 43:1985-1988
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f2fa7322af5968e084a21ac410ba2eb
https://doi.org/10.1109/led.2022.3208840
https://doi.org/10.1109/led.2022.3208840
Publikováno v:
IEEE Transactions on Electron Devices. 69:4129-4137
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1676165a67f263ab9c693126ea7458f7
https://doi.org/10.1109/ted.2022.3183556
https://doi.org/10.1109/ted.2022.3183556
Autor:
Junhua Lai, Zhongming Xue, Bing Zhang, Congzhen Hu, Li Dong, Li Geng, Zhuoqi Guo, Guohe Zhang, Chi Wang, Shuyu Lei, Youze Xin
Publikováno v:
IEEE Transactions on Electron Devices. 69:2858-2864
A 320 x 240 indirect time-of-flight (i-ToF) image sensor with a 5.6-μm two-tap 1.5-V pump gate modulation pixel has been designed. Novel characteristics, such as the optimized pinned layer doping and potential buffer region (PBR) structure with pump
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7769cf1a1220cd7fbec7ac92983e0dfd
https://doi.org/10.1109/ted.2021.3123045
https://doi.org/10.1109/ted.2021.3123045
Publikováno v:
Shock; Oct2023, Vol. 60 Issue 4, p565-572, 8p
Publikováno v:
IEEE Transactions on Electron Devices. 67:4085-4091
The self-heating effects in vacuum gate dielectric gate-all-around field effect transistors (GAA FETs) with vertically stacked 4-nm silicon nanowire (SiNW) channels are investigated by 3-D TCAD simulation. The cross-sectional dimension-dependent ther
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c8cec5524ba4e5abd3d3b9689fda276
https://doi.org/10.1109/ted.2020.3017452
https://doi.org/10.1109/ted.2020.3017452
Publikováno v:
IEEE Transactions on Electron Devices. 67:4060-4066
In this article, an analytical thermal conductivity model for confined nanochannel in gate-all-around silicon nanowire field-effect transistors (GAA SiNW FETs) is developed by considering the limitations caused by the cross section and length. A geom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::637ae2d18087cd4a14a981e5359c5585
https://doi.org/10.1109/ted.2020.3014557
https://doi.org/10.1109/ted.2020.3014557
Publikováno v:
2021 International Conference on Computers and Automation (CompAuto).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21c4f19092d52c762eb72cecbf1eb536
https://doi.org/10.1109/compauto54408.2021.00011
https://doi.org/10.1109/compauto54408.2021.00011
Autor:
Yingchun Wang, Shurong Li, Junhua lai, Zhihui Li, Chengkang Qi, Fei Li, Quangang Xian, Xiao Zhang, Yanjie Zhao
Titanium alloy intermediate casing is a typical large casting, with many thin-walled and complex structures. It is a high cost and time-consuming process in the trial stage to manufacturing the wax pattern of the intermediate casing by metal mold. Ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bfa213609a5129c87929692c03efd34
https://doi.org/10.21203/rs.3.rs-829543/v1
https://doi.org/10.21203/rs.3.rs-829543/v1
Publikováno v:
Microelectronics Reliability. 95:52-57
The self-heating effects (SHEs) for Vacuum Gate Dielectric (VGD) tri-gate FinFET compared with High-k (HK) Dielectric tri-gate FinFET were investigated here based on 3D numerical electro-thermal TCAD simulation method. Simulation results show that VG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::451eb824c3254dc34c9d0d306c89b1a0
https://doi.org/10.1016/j.microrel.2019.02.006
https://doi.org/10.1016/j.microrel.2019.02.006