Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Junho Cheon"'
Autor:
Minchul Sung, Kwangmyoung Rho, Jayong Kim, Junho Cheon, Kiyoung Choi, Dohee Kim, Hoseok Em, Gyeongcheol Park, Jungwook Woo, Yeongyu Lee, Jaehyeon Ko, Moonhoi Kim, Gwangyeob Lee, Seung Wook Ryu, Dong Sun Sheen, Yangsung Joo, Seiyon Kim, Chang Hyun Cho, Myung-Hee Na, Jinkook Kim
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b368d1e138f827222b6bcacae8569598
https://doi.org/10.1109/iedm19574.2021.9720545
https://doi.org/10.1109/iedm19574.2021.9720545
Autor:
Ji-Wook Kwon, Junho Cheon, Sun-Il Hwang, Seung-Tak Ryu, Minchul Shin, Hyeon-June Kim, Dong-Hwan Jin
Publikováno v:
IEEE Sensors Journal. 16:5524-5535
This paper proposes a low-power logarithmic resistance sensor for multi-level cell phase-change memory readout. The proposed sensor is composed of a resistance-to-current converter (R2I) and a current-to-digital converter (I2D). A simple bleeding cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f95d4847384dd59e412c335a95e33df
https://doi.org/10.1109/jsen.2016.2572207
https://doi.org/10.1109/jsen.2016.2572207
Autor:
Junho Cheon, Minchul Shin, Hyeon-June Kim, Ji-Wook Kwon, Dong-Hwan Jin, Sun-Il Hwang, Seung-Tak Ryu
Publikováno v:
IEEE Journal of Solid-State Circuits. 50:2431-2440
This paper presents a narrow-pitch readout circuit for multi-level phase change memory (PCM) employing an architecture of two-step 5 bit logarithmic ADC. A single-slope-architecture based fine ADC yields a 15 $\mu$ m-width compact single channel read
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d1357e855324152eba1b939a59d0929
https://doi.org/10.1109/jssc.2015.2453236
https://doi.org/10.1109/jssc.2015.2453236
Autor:
Gyu-Hyeong Cho, Taekseung Kim, Yoon-Jae Shin, Hyun-Sik Kim, Seungchul Jung, Junho Cheon, SiDuk Sung, Sukhwan Choi, Yong-ki Kim, Hyuck-Sang Yim, Changyong Ahn, Young-Sub Yuk
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 61:3165-3174
A PRAM write driver with an auto-scaling overdrive method is presented. The proposed overdrive method significantly reduces the rise time of the cell-current pulse for bit-line parasitic components of 3 pF and 6 k $\Omega$ , and it lowers the complex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::011e3ae8296114757cab28cd52ecc6ee
https://doi.org/10.1109/tcsi.2014.2334813
https://doi.org/10.1109/tcsi.2014.2334813
Autor:
Junho Cheon, Changwha Chung
Publikováno v:
Academy of Management Proceedings. 2018:17712
This study investigates which kind of terrorism has more severe impacts on foreign subsidiary survival and provides viable approaches for foreign subsidiary to survive when they encounter lethal te...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2238fd37bcb8c09ea2fcd37dfddbbb2b
https://doi.org/10.5465/ambpp.2018.17712abstract
https://doi.org/10.5465/ambpp.2018.17712abstract
Autor:
Junho Cheon, Haris Pozidis, Jong Ho Kang, Nikolaos Papandreou, Aravinthan Athmanathan, Evangelos Eleftheriou, Changyong Ahn, Taekseung Kim, Insoo Lee, Jun Hyun Chun, Minchul Shin, Milos Stanisavljevic
Publikováno v:
CICC
A non-resistance readout scheme for high density multi-level PCRAM is described. Non-resistance read metric with drift resilient nature is enhanced to be suitable for high density memory array with large parasitic time constant. 1G PCM cells in 25nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::943d04cf41e09dfa55a8ffa17183086c
https://doi.org/10.1109/cicc.2015.7338358
https://doi.org/10.1109/cicc.2015.7338358
Autor:
Changyong Ahn, Jung-Hyuk Yoon, Junho Cheon, Aravinthan Athmanathan, Seokjoon Kang, Minchul Shin, Evangelos Eleftheriou, Taekseung Kim, Nikolaos Papandreou, Haris Pozidis, Milos Stanisavljevic
Publikováno v:
A-SSCC
Multiple-Level Cell (MLC) storage provides increased capacity and hence reduced cost-per-bit in memory technologies, thereby rendering such technologies suitable for big data applications. In Phase-Change Memory (PCM), however, MLC storage is serious
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fdc16fe8b3a0026897da642e96265cd
https://doi.org/10.1109/asscc.2014.7008879
https://doi.org/10.1109/asscc.2014.7008879
Global Terrorism and Foreign Subsidiary with Local Embeddedness to Stakeholders in Weak Institution.
Publikováno v:
Academy of Management Annual Meeting Proceedings. 2019, Vol. 2019 Issue 1, p1-1. 1p.
Autor:
Lee, Seok-Ha1 (AUTHOR), Cheon, JunHo1,2 (AUTHOR), Choi, Yeonkyu1 (AUTHOR), Choi, Seongwook1 (AUTHOR), Park, YoungJune1,2 (AUTHOR) ypark@snu.ac.kr
Publikováno v:
Journal of Experimental Nanoscience. Oct2014, Vol. 9 Issue 9, p906-912. 7p.
Autor:
Cheon, Junho, Lee, Insoo, Ahn, Changyong, Stanisavljevic, Milos, Athmanathan, Aravinthan, Papandreou, Nikolaos, Pozidis, Haris, Eleftheriou, Evangelos, Shin, Minchul, Kim, Taekseung, Kang, Jong Ho, Chun, Jun Hyun
Publikováno v:
2015 IEEE Custom Integrated Circuits Conference (CICC); 2015, p1-4, 4p