Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Junhee Lim"'
Autor:
Jin-kyu Kang, Jaeduk Lee, Yongsik Yim, Sejun Park, Hyun Suk Kim, Eun Suk Cho, Taehun Kim, Jung Hoon Lee, Joon Kim, Raeyoung Lee, Junhee Lim, Sunghoi Hur, Su Jin Ahn, Jaihyuk Song
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c9851c87c2dc0c397435376a8feb25a
https://doi.org/10.1109/iedm19574.2021.9720643
https://doi.org/10.1109/iedm19574.2021.9720643
Autor:
J. Jang, Jae-Hoon Lee, Satoru Yamada, Sungkweon Baek, Jong-Ho Lee, Jaehyun Yeo, Joon Han, Chanmin Lee, Junhee Lim, Jang Sung Ho, Kyu-Pil Lee
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
A 35nm node 4Gbit LPDDR3 prototype with high-k metal gate (HKMG) peripheral transistors is implemented for the first time using processes that are fully compatible with those of conventional commercial DRAMs with poly/SiON (PSiON) transistors. This p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d1e9b6a22eaa06cfed3df002e499429
https://doi.org/10.1109/iedm19573.2019.8993517
https://doi.org/10.1109/iedm19573.2019.8993517
Autor:
Seung-Mok Shin, Taiki Uemura, E. S. Jung, Seungbae Lee, Y. Ji, Hyunjo Shin, Joo-Byoung Yoon, H. J. Goo, Yun-Jae Lee, Kyongtaek Lee, Jun-Kyun Park, S. H. Hwang, Jung Hyoung Lee, Jongkyun Kim, G. T. Jeong, Seung-Uk Han, Y. J. Song, K. C. Park, Sun-Ghil Lee, G. H. Koh, B. Y. Seo, Sangwoo Pae, Junhee Lim
Publikováno v:
IRPS
STT-MRAM has great attention as next generation memory to replace commercialized memory. However, not many articles are available on various MRAM reliability items. In this paper, we studied FBC trend of STT-MRAM with ECC off mode under various relia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f393364e289889248b945cecfaaea618
https://doi.org/10.1109/irps.2019.8720429
https://doi.org/10.1109/irps.2019.8720429
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
Scaling limitations in planar-NAND cell are discussed, including the depletion of floating gate and anomalous programming behavior. It is inevitable to have a paradigm shift to 3D-NAND due to numerous scaling limitations of planar NAND. However, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a3d914eeddfa863ed1ca97318993f90
https://doi.org/10.1109/iedm.2016.7838394
https://doi.org/10.1109/iedm.2016.7838394
Autor:
Sungho Jang, E. S. Jung, Hyeongsun Hong, Seung-Uk Han, Satoru Yamada, Sungkweon Baek, Wonchang Jeong, Kijae Huh, Sung-Sam Lee, Junhee Lim, Gyo-Young Jin, Moonyoung Jeong, Kyu-Pil Lee
Publikováno v:
2016 IEEE 8th International Memory Workshop (IMW).
An analysis on the degradation of DRAM performance caused by the NBTI degradation of p-MOSFET is first to be reported. To improve the NBTI immunity, three candidates are examined. First, minimizing Si-H bonds at Si/SiON interface through controlling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf69b35ae8a07cbf9d40f0f8d2cfe34d
https://doi.org/10.1109/imw.2016.7495279
https://doi.org/10.1109/imw.2016.7495279
Autor:
Kinam Kim, Y.M. Kang, D.Y. Choi, H.S. Rhie, S.Y. Lee, H. J. Joo, Byoung-Jae Bae, J.H. Park, S.K. Kang, H.S. Jeong, B.J. Koo, Junhee Lim
Publikováno v:
Integrated Ferroelectrics. 81:57-67
In this study we present an MOCVD-PZT-based 1.6 V operational 1T1C COB FRAM for embedded smart card applications. The extension of FRAM operation to low voltage requires reduction of PZT thickness to 100 nm which is accompanied by a degradation of sa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dd4c505c0107687bae7fcd22aacefd3
https://doi.org/10.1080/10584580600657914
https://doi.org/10.1080/10584580600657914
Publikováno v:
Solid-State Electronics. 39:923-927
In this work, the hot carrier degradation behavior of the halo doped MOSFETs is investigated and an optimized halo design, taking into account the hot carrier reliability, is proposed. Conventional LDD MOSFETs and halo MOSFETs with the variations in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f6a7739ccd6cbc35a84c4550ef78ec3
https://doi.org/10.1016/0038-1101(95)00201-4
https://doi.org/10.1016/0038-1101(95)00201-4
Autor:
Hyuck-Chai Jung, Tae-Young Chung, Kyungseok Oh, Junhee Lim, Sang-Woon Lee, Seok-Han Park, Kinam Kim, Won-suk Yang, Bonggu Sung, Joo-young Lee
Publikováno v:
2008 IEEE International Reliability Physics Symposium.
One of the most important issues for DRAM development is the control of data retention time. A negatively-biased off-state level of the word line (NWL) was introduced to the memory cell design to improve cell transistor "on" current and to maintain "
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac4eed916d63b321594d657a6fea14ee
https://doi.org/10.1109/relphy.2008.4558996
https://doi.org/10.1109/relphy.2008.4558996
Autor:
S.Y. Lee, B.J. Koo, J.H. Park, H.S. Rhie, Junhee Lim, H.S. Jeong, S.K. Kang, Byoung-Jae Bae, Y.M. Kang, H. J. Joo, Kinam Kim
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
We newly developed a highly reliable 100 nm thick MOCVD PZT technology and a novel direct cell via technology applicable to fully logic compatible sub 10F/sup 2/ cell embedded FRAM. A 2Pr value of 40 uC/cm/sup 2/ at 1.6V was obtained on our one-mask
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a34a8827065977203efaa1d8305c07c2
https://doi.org/10.1109/iedm.2004.1419229
https://doi.org/10.1109/iedm.2004.1419229
Publikováno v:
33rd IEEE International Reliability Physics Symposium.
In this work, hot carrier degradation behavior of the halo doped MOSFETs is investigated and an optimized halo design, taking into account the hot carrier reliability, is proposed. Conventional LDD MOSFETs and halo MOSFETs with the variations in LDD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e95b3be34a7ce4241cd5ce21df520715
https://doi.org/10.1109/relphy.1995.513691
https://doi.org/10.1109/relphy.1995.513691