Zobrazeno 1 - 10
of 146
pro vyhledávání: '"Jungnickel, G."'
We present a study of the effects of Nitrogen and Boron doping on the growth of CVD diamond in the (100) mechanism. These are the first calculations of this type and show that, in accordance with recent experimental results, the presently accepted gr
Externí odkaz:
http://arxiv.org/abs/cond-mat/9710054
Publikováno v:
Science, 1996 Apr 01. 272(5258), 87-89.
Externí odkaz:
https://www.jstor.org/stable/2890778
Publikováno v:
In Applied Surface Science 2001 179(1):113-117
Autor:
Sitch, P.K., Jungnickel, G., Kaukonen, M., Porezag, D., Frauenheim, Th., Pederson, M.R., Jackson, K.A.
Publikováno v:
Journal of Applied Physics; 5/1/1998, Vol. 83 Issue 9, p4642, 5p, 1 Diagram, 1 Chart, 4 Graphs
Publikováno v:
Applied Physics A: Materials Science & Processing. 1997, Vol. 64 Issue 3, p321. 6p.
Autor:
Widany, J., Thomas Frauenheim, Köhler, Th, Sternberg, M., Porezag, D., Jungnickel, G., Seifert, G.
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::53b6a87dbc9cb0c5ba8f1c1d54d7f53a
https://doi.org/10.1103/physrevb.53.4443
https://doi.org/10.1103/physrevb.53.4443
We present the results of an atomic-scale simulation of the confinement of small carbon clusters inside icosahedral C60 fullerene. We carefully investigate the incorporation of various clusters into C60 including chains, rings, and double ring config
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::e30691d176d6609a34e3e093effc8bfb
https://aaltodoc.aalto.fi/handle/123456789/17358
https://aaltodoc.aalto.fi/handle/123456789/17358
Autor:
Kaukonen, M., Sitch, P.K., Jungnickel, G., Nieminen, R.M., Pöykkö, S., Porezag, D., Franheim, Th.
The doping of the chemical vapor deposition (CVD)-diamond (100):H(2×1) surface with B and N has been studied using the density-functional tight-binding method. In agreement with recent experimental results, B doping is found to lower the abstraction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______661::ac04fd3e8ce25de6f435b8151b50e4ae
https://aaltodoc.aalto.fi/handle/123456789/28147
https://aaltodoc.aalto.fi/handle/123456789/28147
Autor:
Ong, M.C., Zhao, X.L., Lim, S.H., Chin, J.M., Chia-Ken Leong, Lim, K., Kuechenmeister, F., Jungnickel, G., Platz, A., Su, M., Syahirah, Z., Dong, Z.L.
Publikováno v:
2009 16th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits; 2009, p87-90, 4p