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pro vyhledávání: '"Jungmyoung Shim"'
Autor:
Sang-Deok Kim, Junggeun Kim, Sang Wook Park, Younggeun Jang, Kwangwook Lee, Jong-Hye Cho, Byung-Seok Lee, Eun Soo Kim, Jungmyoung Shim, Jinwoong Kim
Publikováno v:
MRS Proceedings. 1195
Data retention is one of the major device reliabilities of NAND Flash memory. We found that the lower Refractive Index (RI) of the Passivation Silicon Oxynitride (SiON) layer deposited by PECVD, the better data retention behavior was achieved. The hy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb11038b9f875652f9c0ea78d4fd05c2
https://doi.org/10.1557/proc-1195-b07-03
https://doi.org/10.1557/proc-1195-b07-03
