Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Jungmin Moon"'
Autor:
Junyoung Choi, David Grant Colburn Hildebrand, Jungmin Moon, Tran Minh Quan, Tran Anh Tuan, Sungahn Ko, Won-Ki Jeong
Publikováno v:
IEEE Access, Vol 9, Pp 78755-78763 (2021)
The automation and improvement of nano-scale electron microscopy imaging technologies have expanded a push in neuroscience to understand brain circuits at the scale of individual cells and their connections. Most of this research effort, called ‘co
Externí odkaz:
https://doaj.org/article/53f80570c8c44caf95eda59b0d7c06b0
Autor:
Sungahn Ko, Jungmin Moon, Junyoung Choi, Won-Ki Jeong, David G. C. Hildebrand, Tran Anh Tuan, Tran Minh Quan
Publikováno v:
IEEE Access, Vol 9, Pp 78755-78763 (2021)
The automation and improvement of nano-scale electron microscopy imaging technologies have expanded a push in neuroscience to understand brain circuits at the scale of individual cells and their connections. Most of this research effort, called ‘co
Publikováno v:
IEEE Transactions on Electron Devices. 66:378-382
The fluorine (F) effect originating from the chemical vapor deposited (CVD) tungsten (W) process on charge-trap flash memory devices was systematically investigated, and the CVD-W memory was compared with physical vapor deposited (PVD) W memory. The
Autor:
Wan Sik Hwang, Hyun Yong Yu, Jungmin Moon, Tae In Lee, Byung Jin Cho, Yujin Seo, Hyun Jun Ahn
Publikováno v:
IEEE Transactions on Electron Devices. 64:4242-4245
A new method of forming an ohmic contact without an increase in parasitic resistance is proposed in the Ti/GeO2/Ge substrate. Fermi-level depinning in Ti/GeO2/n–Ge contacts is possible with the formation of an interfacial TiOx layer in the contacts
Autor:
Byung Jin Cho, Yujin Seo, Tae In Lee, Hyun Jun Ahn, Choong-Ki Kim, Jungmin Moon, Wan Sik Hwang, Hyun Yong Yu
Publikováno v:
IEEE Transactions on Electron Devices. 64:2599-2603
Nickel germanide (NiGe) was formed from atomic layer deposition (ALD) Ni on Ge and a subequent annealing process; the Ni film with low resistivity ( $34~\mu \Omega \cdot \text {cm}$ ) at 15 nm was obtained by N2 + H2 plasma treatment after Ni precurs
Autor:
George S. Plummer, Isaac H. Bianco, Andrew Champion, Arthur W. Wetzel, David G. C. Hildebrand, Joshua T. Vogelstein, Marcelo Cicconet, Russel Torres, Alexander F. Schier, Owen Randlett, Randal Burns, Jeff W. Lichtman, Wei-Chung Allen Lee, Won-Ki Jeong, Stephan Saalfeld, Alexander D. Baden, Jungmin Moon, Florian Engert, Tran Minh Quan, Ruben Portugues, Woohyuk Choi, Kunal Lillaney, Brett J. Graham
Publikováno v:
Nature. 545:345-349
Investigating the dense meshwork of wires and synapses that form neuronal circuits is possible with the high resolution of serial-section electron microscopy (ssEM)1. However, the imaging scale required to comprehensively reconstruct axons and dendri
Autor:
Hyun Jun Ahn, Byung Jin Cho, Wan Sik Hwang, Yujin Seo, Hyun-Young Yu, Tae In Lee, Jungmin Moon
Publikováno v:
Solid-State Electronics. 130:57-62
The use of a GeO 2 interfacial layer (IL) between a high-k dielectric and a Ge substrate helps to reduce the interface state density in Ge MOS devices. We report that the presence of the GeO 2 IL changes the effective work function (eWF) of the gate
Autor:
Il Cheol Rho, Byung Jin Cho, Wan Sik Hwang, Jungmin Moon, Yujin Seo, Hyun Jun Ahn, Choon Hwan Kim, Choong-Ki Kim, Sungho Koh
Publikováno v:
IEEE Transactions on Electron Devices. 63:2858-2863
Erbium carbide (ErC2) prepared by atomic layer deposition (ALD) is successfully demonstrated for the first time as a novel work function (WF) metal for nMOSFET applications. The prepared ErC2 shows a very low effective WF (eWF), as low as 3.9 eV on H
Autor:
Il Cheol Rho, Jungmin Moon, Yujin Seo, Wan Sik Hwang, Byung Jin Cho, Choon Hwan Kim, Tae In Lee, Hyun Jun Ahn, Choong-Ki Kim
Publikováno v:
IEEE Transactions on Electron Devices. 63:1423-1427
The effective work function (eWF) of Al-doped titanium carbide (TiAlC) metal electrodes prepared by atomic layer deposition shows a strong dependence on the underlying gate dielectrics. The eWF of TiAlC on HfO2 shows a low value of 4.2 eV independent