Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Jungkwan Kim"'
Autor:
Park Se-Hwan, Myung-Hoon Choi, Seonyong Lee, Seung-jae Lee, Jisoo Cho, Garam Kim, Youngsun Song, Ki-chang Jang, Dongku Kang, Young-don Choi, Jisu Kim, Sang-Lok Kim, Hyun-Jun Yoon, Jung-Hwan Choi, Ii Han Park, Jong-Eun Park, Kyung-Hwa Kang, Jaeheon Jeong, Heejin Kim, Dong-Hyun Shin, Sung-Min Joe, Joonsoo Kwon, Jonghoo Jo, Lee Han-Jun, Hyung-Gon Kim, Doohyun Kim, Jungmin Park, Joon-Suc Jang, Dae-Seok Byeon, Kanabin Lee, Jungkwan Kim, Jinbae Bang, Jeong-Don Lim, Park Jiyoon, Seuna Hyun Moon, Sung-Won Yun, Ki-whan Song, Pansuk Kwak, Sohyun Park, Minseok Kim, Joo-Yona Park, Hwajun Jang, Jong Min Kim, Deokwoo Lee, Sang Joon Hwang
Publikováno v:
ISSCC
3D NAND flash memory has enhanced its areal density by more than 50% per year by virtue of the aggressive development of 3D WL stacking technology for the recent three consecutive years [1]–[3]. Also storage market still requires more bits for dive
Autor:
Ki-whan Song, Gyo Soo Choo, Kitae Park, Kye-Hyun Kyung, Dae-Seok Byeon, Jisu Kim, Jinbae Bang, Moosung Kim, Lee Kang-Bin, Lee Han-Jun, Seung-Bum Kim, Seonyong Lee, Minyeong Lee, Sung-Min Joe, Jinwon Choi, Jonghoo Jo, Kyung Min Kim, Chulbum Kim, Jeong-Don Lim, Young-Sun Min, Young-don Choi, Joon-Suc Jang, Dongjin Shin, Nahyun Kim, Rho Young-Sik, Park Jiyoon, Jungkwan Kim, Hwajun Jang, Yong-Ha Park, Deokwoo Lee, Young-Hwan Ryu, SeonGeon Lee, Yu Chung-Ho, Ho-joon Kim, Minseok Kim, Jonghoon Park, Hyun-Jin Kim, Seung-Hyun Moon, Seung-jae Lee, Cheon An Lee, Sohyun Park, Minsu Kim
Publikováno v:
ISSCC
Since the first demonstration of a production quality three-dimensional (3D) stacked-word-line NAND Flash memory [1], the 3b/cell 3D NAND Flash memory has seen areal density increases of more than 50% per year due to the aggressive development of 3D-
Autor:
Jeonghye Han, Seungmin Lee Lee, Bokhyun Kang, Sungju Park, Jungkwan Kim, Myungsook Kim, Mihee Kim
Publikováno v:
2010 5th ACM/IEEE International Conference on Human-Robot Interaction (HRI).