Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Junghyung Lee"'
Publikováno v:
Soonchunhyang Medical Science. 28:67-70
If cardiac sympathetic activity increases after myocardial injury, a ventricular electrical storm (VES) may occur. The stellate ganglion block is a minimally invasive technique performed to control VES through temporary sympathetic cessation. This ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4da6a717469ba77613daad89127698c0
https://doi.org/10.15746/sms.22.013
https://doi.org/10.15746/sms.22.013
Autor:
Chan-Ha Park, Jeroen Van de Kerkhove, Nouredine Rassoul, Anne-Laure Charley, Pieter Vanelderen, Frederic Lazzarino, Lieve Van Look, Amir-Hossein Tamaddon, Romuald Blanc, Frieda Van Roey, Geert Vandenberghe, Danilo De Simone, Kurt G. Ronse, Chang-Moon Lim, Junghyung Lee, Sarohan Park, Kilyoung Lee, Nadia Vandenbroeck, Roberto Fallica, Gian Lorusso
Publikováno v:
Extreme Ultraviolet (EUV) Lithography X.
Extreme ultraviolet (EUV) materials are deemed as critical to enable and extend the EUV lithography technology. Currently both chemically amplified resist (CAR) and metal-oxide resist (MOR) platforms are candidates to print tight features on wafer, h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbc1b20f28b8697fcc5bc1e231e9123f
https://doi.org/10.1117/12.2515170
https://doi.org/10.1117/12.2515170
Autor:
De Simone, Danilo, Blanc, Romuald, Van de Kerkhove, Jeroen, Tamaddon, Amir-Hossein, Fallica, Roberto, Van Look, Lieve, Rassoul, Nouredine, Lazzarino, Frederic, Vandenbroeck, Nadia, Vanelderen, Pieter, Lorusso, Gian, Van Roey, Frieda, Charley, Anne-Laure, Vandenberghe, Geert, Ronse, Kurt, Kilyoung Lee, Junghyung Lee, Sarohan Park, Chang-Moon Lim, Chan-Ha Park
Publikováno v:
Proceedings of SPIE; 1/20/2019, Vol. 10957, p109570T-1-109570T-10, 10p
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
Sub 0.3k1 regime has been widely adopted for high volume manufacturing (HVM) of optical lithography due to various resolution enhancement technologies (RETs). It is not certain when such low k1 is feasible in EUV, though most technologies are availab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7c23550bdcdfbcff6aef820d75d2eb6
https://doi.org/10.1117/12.2219546
https://doi.org/10.1117/12.2219546
Autor:
Seung-Uk Jeong, Junghyung Lee, Mijung Lim, Sunyoung Koo, Ji Eun Kim, Young-Sik Kim, Chang-Moon Lim
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
Extreme Ultraviolet (EUV) is the most promising technology as substitute for multiple patterning based on ArF immersion lithography. If enough productivity can be accomplished, EUV will take main role in the chip manufacturing. Since the introduction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b2877eb834907bb69f60261ea6928f0
https://doi.org/10.1117/12.2219558
https://doi.org/10.1117/12.2219558
Autor:
Junghyung Lee, Myongsoo Kim, Cheol-Kyu Bok, Changil Oh, Hyosang Kang, Jaeheon Kim, Junggun Heo
Publikováno v:
Journal of Photopolymer Science and Technology. 25:593-596
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7eeb672d175dd18549129fa38d90e104
https://doi.org/10.2494/photopolymer.25.593
https://doi.org/10.2494/photopolymer.25.593
Autor:
Junghyung Lee, Sungki Park, Cheol-Kyu Bok, Changil Oh, Eunjoo Park, Won-Taik Kwon, Hyungsuk Seo
Publikováno v:
SPIE Proceedings.
Recently in the R&D area DRAM has shrunk to 1X nm, at the same time patterning technology has been one of the major challenges on 1X nm DRAM. Less than 20nm line and space and less than 30nm contact hole patterning are basically needed for 1X nm DRAM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::196ca328fd599ac74620999d98e24c2c
https://doi.org/10.1117/12.2046624
https://doi.org/10.1117/12.2046624
Publikováno v:
IEEE Transactions on Nanotechnology. :1-1
We propose a process combining metal-assisted chemical etching and a spacer patterning technique to fabricate dense, vertical silicon nanotubes (SiNTs) with sub-60 nm wall thickness, which may have potential advantages for various devices. Moreover,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32a424fa7d51146e7770f04e6eb89eb0
https://doi.org/10.1109/tnano.2016.2637911
https://doi.org/10.1109/tnano.2016.2637911
Autor:
Junghyung Lee, Kilyoung Lee, Jaeheon Kim, Cheol-Kyu Bok, Junggun Heo, Sungki Park, Hyeong-Soo Kim, Hyunkyung Shim, Donggu Yim
Publikováno v:
SPIE Proceedings.
Contact hole patterning is more difficult than line/space patterning as mask error factor is higher in contact hole patterning which has 2-dimensional patterns. As the industry moves towards 40nm node and beyond, the challenges associated with contac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::071f8e5f79559f60437437dd9e191a53
https://doi.org/10.1117/12.846388
https://doi.org/10.1117/12.846388
Autor:
Changil Oh, Junggun Heo, Donggyu Yim, Sungki Park, Cheol-Kyu Bok, Junghyung Lee, Keundo Ban, Hyunkyung Shim
Publikováno v:
SPIE Proceedings.
In recent years ArF immersion lithography in memory devices, topcoat process has become baseline process in mass production in spite of its additional process steps and high cost-of-ownership. In order to overcome low process efficiency of topcoat pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69fa81abf45380c587de343444f97b1d
https://doi.org/10.1117/12.846707
https://doi.org/10.1117/12.846707