Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Junghyeon Hwang"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 988-992 (2024)
Metal-ferroelectric-metal-insulator-semiconductor (MFMIS) FeFETs have significant potential for use in non-volatile memory applications. This is primarily due to their compatibility with CMOS technology and reliable switching characteristics. Previou
Externí odkaz:
https://doaj.org/article/0d41dabd5f1940ba87662a880a19bb7c
Autor:
Minhyun Jung, Seungyeob Kim, Junghyeon Hwang, Hye Jin Kim, Yunjeong Kim, Jinho Ahn, Sanghun Jeon
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 2, Pp n/a-n/a (2024)
Abstract The development of artificial tactile receptor systems is important in the fields of prosthetic devices, interfaces for the metaverse, and sensors. A pressure sensor and memory device may be used in this system to replicate the tactile detec
Externí odkaz:
https://doaj.org/article/2d22a22119e3433c8d5dbe204bd35123
Autor:
Sehee Lim, Youngin Goh, Young Kyu Lee, Dong Han Ko, Junghyeon Hwang, Yeongseok Jeong, Hunbeom Shin, Sanghun Jeon, Seong-Ook Jung
Publikováno v:
IEEE Journal of Solid-State Circuits. :1-11
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a3cd02e87b9ae413ce9ed95bda05c73
https://doi.org/10.1109/jssc.2023.3265667
https://doi.org/10.1109/jssc.2023.3265667
Publikováno v:
IEEE Electron Device Letters. 43:1049-1052
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f86f287036a81376644551571f1aa44e
https://doi.org/10.1109/led.2022.3179385
https://doi.org/10.1109/led.2022.3179385
Publikováno v:
IEEE Transactions on Electron Devices. 69:3439-3445
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24655c7c566e4bd31f83c83b7449a0d1
https://doi.org/10.1109/ted.2022.3165167
https://doi.org/10.1109/ted.2022.3165167
Autor:
Bohyeon Kang, Jongseo Park, Junghyeon Hwang, Sangho Lee, Hunbeom Shin, Jehyun An, Hyunseo You, Sung-Min Ahn, Sanghun Jeon, Rock-Hyun Baek
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86234e3b9b42e3cbbb3db318351bc17d
https://doi.org/10.1109/edtm55494.2023.10102929
https://doi.org/10.1109/edtm55494.2023.10102929
A Highly Integrated Crosspoint Array Using Self-rectifying FTJ for Dual-mode Operations: CAM and PUF
Autor:
Sehee Lim, Youngin Goh, Young Kyu Lee, Dong Han Ko, Junghyeon Hwang, Minki Kim, Yeongseok Jeong, Hunbeom Shin, Sanghun Jeon, Seong-Ook Jung
Publikováno v:
ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75491adae09415ef0e27aeb6f067de00
https://doi.org/10.1109/esscirc55480.2022.9911355
https://doi.org/10.1109/esscirc55480.2022.9911355
Publikováno v:
Solid-State Electronics. :108674
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6045cda54ab407ee7e94172c0ffb74c0
https://doi.org/10.1016/j.sse.2023.108674
https://doi.org/10.1016/j.sse.2023.108674
Publikováno v:
IEEE Transactions on Electron Devices. 68:523-528
In recent years, several experimental approaches have been adopted to study and understand the mechanism and improve the ferroelectricity of fluorite-type hafnia-based ferroelectric materials. In this regard, significant efforts have been made to elu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9db4202b343a7ea8fbafc03b781f1043
https://doi.org/10.1109/ted.2020.3046173
https://doi.org/10.1109/ted.2020.3046173