Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Junghoon Ser"'
Autor:
Sung-Hoon Jang, Kevin Lucas, Munhoe Do, Johnny Yeap, Insung Kim, Jonathan Cobb, Junghoon Ser, Young-Chang Kim
Publikováno v:
SPIE Proceedings.
Although technical issues remain to be resolved, EUV lithography is now a serious contender for critical layer patterning of upcoming 2X node memory and 14nm Logic technologies in manufacturing. If improvements continue in defectivity, throughput and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa7a312ade69dec9a114c34aff71109b
https://doi.org/10.1117/12.880230
https://doi.org/10.1117/12.880230
Autor:
Thomas Schmöller, Young-Chang Kim, Bernd Küchler, John Lewellen, Seung-Hune Yang, Eun-Ju Kim, Chang-Jin Kang, Seongho Moon, Ulrich Klostermann, Junghoon Ser, Sooryong Lee, Seong-Woon Choi, Artem Shamsuarov
Publikováno v:
SPIE Proceedings.
In this paper, we discuss the accuracy of resist model calibration under various aspects. The study is done based on an extensive OPC dataset including hundreds of CD values obtained with immersion lithography for the sub-30 nm node. We address imagi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81a6de21215b4f60a91dd30d41b71359
https://doi.org/10.1117/12.879592
https://doi.org/10.1117/12.879592
Autor:
Tom Cecil, Chang-Jin Kang, Hyun-Jong Lee, Junghoon Ser, Christopher Ashton, David Kim, Xin Zhou, Guangming Xiao, Sung-Gon Jung, Donghwan Son, Seong-Woon Choi, Woojoo Sim, David Irby, Sungsoo Suh
Publikováno v:
SPIE Proceedings.
For low k1 lithography the resolution of critical patterns on large designs can require advanced resolution enhancement techniques for masks including scattering bars, complicated mask edge segmentation and placement, etc. Often only a portion of a l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c2f1852604ae07340417cb0b44e040f
https://doi.org/10.1117/12.879781
https://doi.org/10.1117/12.879781
Publikováno v:
SPIE Proceedings.
In this paper, new metric, acid concentration distribution image log slope (AILS) is suggested to predict pattern failure in photo lithography. By introducing AILS, pattern fidelity can be determined as numbers. With evaluating at the top 10% and bot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15d71f16c2ca807405edc34da8552ebb
https://doi.org/10.1117/12.864301
https://doi.org/10.1117/12.864301
Autor:
Donghwan Son, Tom Cecil, Sung-Gon Jung, Moon-Gyu Jeong, Sung-Woo Lee, Xin Zhou, Woojoo Sim, Robert E. Gleason, Junghoon Ser, Lan Luan, Seoung-woon Choi, David Kim
Publikováno v:
SPIE Proceedings.
For semiconductor IC manufacturing at sub-30nm and beyond, aggressive SRAFs are necessary to ensure sufficient process window and yield. Models used for full chip Inverse Lithography Technology (ILT) or OPC with aggressive SRAFs must predict both CDs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80ba331cf6dad07f964f3842e6b786e1
https://doi.org/10.1117/12.864528
https://doi.org/10.1117/12.864528
Autor:
Lena Zavyalova, Sung-Woo Lee, Yongfa Fan, Kyoil Koo, Sooryong Lee, Thomas Schmoeller, Chun-Suk Suh, Jason Huang, Irene Su, Moon-Gyu Jeongb, Junghoon Ser, Brad Falch
Publikováno v:
SPIE Proceedings.
As semiconductor manufacturing moves to 32nm and 22nm technology nodes with 193nm water immersion lithography, the demand for more accurate OPC modeling is unprecedented to accommodate the diminishing process margin. Among all the challenges, modelin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d3c39ead431813a61b53ff0324b006f
https://doi.org/10.1117/12.846737
https://doi.org/10.1117/12.846737
Autor:
Tae-Hoon Park, Chan-Hoon Park, Joo-Tae Moon, Seong-Woon Choi, Eun-Mi Lee, Junghoon Ser, Sung-Woo Lee, Chun-Suk Suh, Moon-Gyu Jeong
Publikováno v:
SPIE Proceedings.
OPC models with and without thick mask effect (3D-mask effect) are compared in their prediction capabilities of actual 2D patterns. We give some examples in which thin-mask models fail to compensate the 3D-mask effect. The models without 3D-mask effe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c9e3ee67be005c06b7128462ae29ae0
https://doi.org/10.1117/12.848317
https://doi.org/10.1117/12.848317