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Publikováno v:
Journal of Photopolymer Science and Technology. 24:497-501
Contact hole patterning for half pitch 51nm can be achieved by single exposure for mass production and for half pitch 39nm can be achieved by Litho-Etch-Litho-Etch (LELE). Currently for half pitch 32nm there is no promising solution so far, but ouble
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63b62af816e6ba850ad1a76c21d99f48
https://doi.org/10.2494/photopolymer.24.497
https://doi.org/10.2494/photopolymer.24.497
