Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Junggeun Kim"'
Publikováno v:
Korea International Trade Research Institute. 15:313-329
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4b756083e023c1d7795059afd28b49d
https://doi.org/10.16980/jitc.15.6.201912.313
https://doi.org/10.16980/jitc.15.6.201912.313
Autor:
Sang-Deok Kim, Junggeun Kim, Sang Wook Park, Younggeun Jang, Kwangwook Lee, Jong-Hye Cho, Byung-Seok Lee, Eun Soo Kim, Jungmyoung Shim, Jinwoong Kim
Publikováno v:
MRS Proceedings. 1195
Data retention is one of the major device reliabilities of NAND Flash memory. We found that the lower Refractive Index (RI) of the Passivation Silicon Oxynitride (SiON) layer deposited by PECVD, the better data retention behavior was achieved. The hy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb11038b9f875652f9c0ea78d4fd05c2
https://doi.org/10.1557/proc-1195-b07-03
https://doi.org/10.1557/proc-1195-b07-03
Publikováno v:
2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop.
In IMD study Rs reduction and better uniformity as well as lower capacitance were achieved in 60 nm 2 Giga Bit NAND flash memory. It alos fabricated 70 % air-gap of gate and calculated interference reduction in 45 nm device when it was applied throug
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::909724f4f173594a42bfc0f4bab8f17b
https://doi.org/10.1109/nvsmw.2007.4290578
https://doi.org/10.1109/nvsmw.2007.4290578
Publikováno v:
2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop; 2007, p54-55, 2p