Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Junggeun Jhin"'
Autor:
Woo Seop Jeong, Min Joo Ahn, Hyun-A Ko, Kyu-yeon Shim, Seongho Kang, Hwayoung Kim, Dae-sik Kim, Junggeun Jhin, Dongjin Byun
Publikováno v:
AIP Advances, Vol 13, Iss 3, Pp 035316-035316-6 (2023)
In this study, a gallium nitride (GaN) template fabrication method for efficient chemical lift-off (CLO) is developed. CLO is slower than other lift-off methods. An air tunnel structure is formed using a photoresist to reduce the process time and imp
Externí odkaz:
https://doaj.org/article/d8acc87e4f6e498e81fae7a67be28050
Autor:
Min-joo Ahn, Woo-seop Jeong, Kyu-yeon Shim, Seongho Kang, Hwayoung Kim, Dae-sik Kim, Junggeun Jhin, Jaekyun Kim, Dongjin Byun
Publikováno v:
Materials; Volume 16; Issue 6; Pages: 2462
This study provides experimental evidence regarding the mechanism of gallium nitride (GaN) selective-area growth (SAG) on a polished plateau-patterned sapphire substrate (PP-PSS), on which aluminum nitride (AlN) buffer layers are deposited under the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27f2cb8b7d68b27afcf2134fa433d0e4
https://doi.org/10.3390/ma16062462
https://doi.org/10.3390/ma16062462
Autor:
Min Joo Ahn, Kyu-yeon Shim, Woo Seop Jeong, Seongho Kang, Hwayoung Kim, Dae-sik Kim, Junggeun Jhin, Jaekyun Kim, Dongjin Byun
Publikováno v:
Vacuum. 207:111628
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27cfaf0aedff4372f237e594deea95d8
https://doi.org/10.1016/j.vacuum.2022.111628
https://doi.org/10.1016/j.vacuum.2022.111628
Publikováno v:
Korean Journal of Materials Research. 28:208-213
Epitaxial (1120) a-plane GaN films were grown on a (1102) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04c0753c90d0376788d6c0cb33b0a083
https://doi.org/10.3740/mrsk.2018.28.4.208
https://doi.org/10.3740/mrsk.2018.28.4.208
Publikováno v:
Korean Journal of Materials Research. 27:699-704
Recently, the use of an aluminum nitride(AlN) buffer layer has been actively studied for fabricating a high quality gallium nitride(GaN) template for high efficiency Light Emitting Diode(LED) production. We confirmed that AlN deposition after N2 plas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae5a26d5362eae88f023f3ffb0f10fae
https://doi.org/10.3740/mrsk.2017.27.12.699
https://doi.org/10.3740/mrsk.2017.27.12.699
Autor:
Byung Hoon Kang, Junsung Park, Junggeun Jhin, Dongjin Byun, Jee Eun Lee, Seonho Bae, Dae Sik Kim, Seojoo Jung
Publikováno v:
Journal of Nanoscience and Nanotechnology. 16:11563-11568
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::925d15647397a2466add9346cef03ab1
https://doi.org/10.1166/jnn.2016.13552
https://doi.org/10.1166/jnn.2016.13552
Publikováno v:
Journal of Nanoscience and Nanotechnology. 16:11575-11579
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e562d6ed6ed87769fa43e336a555284
https://doi.org/10.1166/jnn.2016.13554
https://doi.org/10.1166/jnn.2016.13554
Autor:
Kyeong Jae Byeon, Heon Lee, Joong Yeon Cho, Jong Hyeob Baek, Junggeun Jhin, Eun Ju Hong, Seong Hwan Lee, Hyoungwon Park
Publikováno v:
Thin Solid Films. 519:2241-2246
A UV-imprinting process for a full wafer was developed to enhance the light extraction of GaN-based green light-emitting diodes (LEDs). A polyvinyl chloride flexible stamp was used in the imprinting process to compensate for the poor flatness of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2429ec48c4d53f3db4adcff666abcbd
https://doi.org/10.1016/j.tsf.2010.10.039
https://doi.org/10.1016/j.tsf.2010.10.039
Autor:
Seogwoo Lee, Jihyun Kim, Sung-Min Hwang, Jeong Tak, Jae Hyoun Park, Sung-Ho Lee, Kwang Hyeon Baik, Hooyoung Song, Junggeun Jhin
Publikováno v:
Journal of the Korean Physical Society. 56:1140-1143
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b56c6f0b1a37c6f3ca1d589c2963cb38
https://doi.org/10.3938/jkps.56.1140
https://doi.org/10.3938/jkps.56.1140
Autor:
Jong-Hyeob Baek, Kwangtaek Lee, Young-Moon Yu, Samseok Jang, Jaesang Lee, Dongjin Byun, Bum-Joon Kim, Seung-Jae Lee, Junggeun Jhin
Publikováno v:
Chemical Vapor Deposition. 16:80-84
An epitaxial, laterally-overgrown (ELOG) GaN layer is deposited on a Si(111) substrate using high-dose, N+ ion implantation. ELOG GaN is deposited on a Si(111) wafer with implantation stripes by metal-organic (MO) CVD. The GaN layer on the N+ ion-imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dc9aa34a3bee31795b28cfda04cff19
https://doi.org/10.1002/cvde.200906807
https://doi.org/10.1002/cvde.200906807