Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Jung-Young Jung"'
Autor:
Ohshima, Jun, Wang, Qian, Fitzsimonds, Zackary R., Miller, Daniel P., Sztukowska, Maryta N., Jung, Young-Jung, Hayashi, Mikako, Whiteley, Marvin, Lamont, Richard J.
Publikováno v:
Proceedings of the National Academy of Sciences of the United States of America, 2019 Apr . 116(17), 8544-8553.
Externí odkaz:
https://www.jstor.org/stable/26703537
Autor:
Younghyun Wy, Jaesung Park, Sung Huh, Hyuksang Kwon, Bon Seung Goo, Jung Young Jung, Sang Woo Han
Publikováno v:
Nanoscale. 15:1537-1541
A surface-enhanced Raman spectroscopy-based in situ analytical tool for the sensitive and rapid monitoring of hydrogen transport through graphene was developed.
Publikováno v:
In Archives of Oral Biology January 2017 73:72-78
Publikováno v:
In Journal of Endodontics October 2014 40(10):1587-1592
Publikováno v:
Cellular Microbiology. May2017, Vol. 19 Issue 5, pn/a-N.PAG. 11p.
Publikováno v:
Cellular Microbiology. Sep2015, Vol. 17 Issue 9, p1304-1319. 16p.
Autor:
Linda Reven, Jung Young Jung, Violeta Toader, Ignacio Hegoburu, Alejandro D. Rey, Ezequiel R. Soule, Min Jeong Shin, Safiya Allie
Publikováno v:
Soft matter. 14(42)
Liquid crystal (LC)-polymer blends are important stimuli responsive materials already employed in a wide range of applications whereas nanoparticle (NP)-LC blends are an emerging class of nanocomposites. Polymer ligands offer the advantages of synthe
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Autor:
Jonghee Hwang, Hoki Son, Dae-Woo Jeon, Jung-Young Jung, Jinwon Gim, Jin Ho Kim, Dae-Ho Yoon, Jin-Hun Kim, Hae-Kon Oh, Mi-Jai Lee, Hae-Yong Lee, Young Jun Choi, Tae-Young Lim
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 28:776-780
In this paper, we have studied the effect of mechanical polishing to Ga-polar face for reducing the wafer bowing and strain in free-standing GaN. After the mechanical polishing to Ga-polar face, the bowing of the free-standing GaN substrate significa
Autor:
Jonghee Hwang, Hae-Kon Oh, Hyun-Soo Jang, Young Jun Choi, Jun Young Kim, Jin-Hun Kim, Hae-Yong Lee, Jung Young Jung
Publikováno v:
physica status solidi c. 11:477-482
We are going to develop GaN growth process by HVPE method, which shows the near null value of free standing (FS)-GaN wafer bowing after laser lift-off (LLO) process in order to reduce the production cost of GaN substrate. The 309 to 318 µm thick HVP