Zobrazeno 1 - 10
of 76
pro vyhledávání: '"Jung-Yeal Lee"'
Publikováno v:
Korean Artificial Intelligence. 5:10-17
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa896f8daf172901e56b5f472f88db7b
https://doi.org/10.24225/kjai.2017.5.1.10
https://doi.org/10.24225/kjai.2017.5.1.10
Publikováno v:
Applied Surface Science. 257:7516-7520
Effects of different annealing atmospheres on the surface and microstructural properties of ZnO thin films grown on Si (1 0 0) substrates were investigated. X-ray diffraction results showed that the crystallinity of the ZnO thin film annealed in an o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::173937a5b6fa82870de4e152c0a4c1a9
https://doi.org/10.1016/j.apsusc.2011.03.071
https://doi.org/10.1016/j.apsusc.2011.03.071
Publikováno v:
Journal of Alloys and Compounds. 509:3132-3135
ZnO nanocrystals embedded in an amorphous Zn 2 x Si 1− x O 2 layer inserted between a ZnO thin film and a p-Si (1 0 0) substrate were formed by magnetron sputtering and thermal annealing. High-resolution transmission electron microscopy (HRTEM) ima
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c900c7fd0fe655a01aa4bd0c76ba43d
https://doi.org/10.1016/j.jallcom.2010.12.021
https://doi.org/10.1016/j.jallcom.2010.12.021
Autor:
Tae-Hoon Yoon, Dong Hae Suh, Jung Yeal Lee, Seong Ryong Lee, Chul Gyu Jhun, Jae Chang Kim, Jeong Dong Noh
Publikováno v:
Japanese Journal of Applied Physics. 45:2683-2688
We propose an overdriving method by double-pulse scan (DPS) within each subframe time. We applied this method to a field-sequential color (FSC) driving of a thin-film-transistor liquid crystal display (TFT-LCD) in the optically compensated bend (OCB)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcdc809d2d6c2802be6739c07a70b054
https://doi.org/10.1143/jjap.45.2683
https://doi.org/10.1143/jjap.45.2683
Publikováno v:
Journal of Materials Science. 40:3843-3846
Many investigations on ordered phases in various III–V ternary compound semiconductor epilayers have been performed during past many years [1–10]. Among the various kinds of the ordering structures, a CuPttype superstructure has been the most ext
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7886157de4b96223d47dce4b32d64569
https://doi.org/10.1007/s10853-005-2557-8
https://doi.org/10.1007/s10853-005-2557-8
Publikováno v:
Journal of Materials Science Letters. 22:1263-1267
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73af2a57df9c640b22b89c86a305c679
https://doi.org/10.1023/a:1025458102274
https://doi.org/10.1023/a:1025458102274
Publikováno v:
Journal of Applied Physics. 91:1166-1170
Influence of strain relaxation on structural and optical properties of the InGaN/GaN multiple quantum wells (MQWs) with high indium composition grown by metalorganic chemical vapor deposition was investigated. From photoluminescence and transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1771806e0bb540717b819887e7b4df8
https://doi.org/10.1063/1.1429765
https://doi.org/10.1063/1.1429765
Publikováno v:
Journal of Crystal Growth. 233:667-672
Structural properties of Si and Mg doped and undoped Al 0.13 Ga 0.87 N layers grown on sapphire substrates by metalorganic chemical vapor deposition were studied using high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy. Fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b412cb1ad56892de57ad93a1464b761
https://doi.org/10.1016/s0022-0248(01)01627-x
https://doi.org/10.1016/s0022-0248(01)01627-x
Autor:
T.-V. Humg, M. S. Jo, S. J. Son, S.-R. Jeon, Jung-Yeal Lee, Hyung Koun Cho, G. M. Yang, S. W. Hwang
Publikováno v:
physica status solidi (a). 188:163-166
We have investigated the characteristics of InGaN/GaN blue light-emitting diodes (LEDs) with a Si 6-doped GaN contact layer. The Si 6-doping of the GaN contact layer in the devices could enhance the Si doping concentration and improve the lateral con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3127a8b7bee0546c7d4a261380a4424
https://doi.org/10.1002/1521-396x(200111)188:1<163::aid-pssa163>3.0.co
https://doi.org/10.1002/1521-396x(200111)188:1<163::aid-pssa163>3.0.co
Publikováno v:
Journal of the Society for Information Display. 9:155-160
Several TFT-LCD devices exhibiting high image quality have been developed and commercialized, overcoming the narrow viewing-angle characteristics of conventional twisted-nematic (TN) devices. Nevertheless, no single device dominates large-sized TFT-L
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fc0680aae3cd91047aa95755a43bdbc
https://doi.org/10.1889/1.1828781
https://doi.org/10.1889/1.1828781