Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Jung-Sun You"'
Publikováno v:
Journal of Materials Research and Technology, Vol 24, Iss , Pp 3413-3422 (2023)
The influence of carbide precipitation on the mechanical properties of hot work tool steels was investigated in this study. Compared to the commercial H13 hot work tool steel, the KMoW and RW steels containing W exhibited a reduced high-temperature s
Externí odkaz:
https://doaj.org/article/5b75b28330a7462686261141d3c50b94
Publikováno v:
Korean Journal of Environmental Agriculture. 40:142-147
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bc05cb0ca6837a762c0bcb6c28ff51b
https://doi.org/10.5338/kjea.2021.40.2.17
https://doi.org/10.5338/kjea.2021.40.2.17
Publikováno v:
Korean Journal of Environmental Agriculture. 39:305-311
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d8423a1acf9c917b9b698ea1b93a41d
https://doi.org/10.5338/kjea.2020.39.4.36
https://doi.org/10.5338/kjea.2020.39.4.36
Publikováno v:
Korean Journal of Environmental Agriculture. 39:122-129
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3628f0ff96b9885fd6dc4371de29911
https://doi.org/10.5338/kjea.2020.39.2.16
https://doi.org/10.5338/kjea.2020.39.2.16
Publikováno v:
Korean Journal of Environmental Agriculture. 37:97-103
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ceab71cc4f9477afeefb00511820346
https://doi.org/10.5338/kjea.2018.37.2.17
https://doi.org/10.5338/kjea.2018.37.2.17
Publikováno v:
ECS Transactions. 33:173-181
In order to reduce the leakage current in n-channel polycrystalline silicon thin film transistors processed by field-aided lateral crystallization, we applied a reduced gate structure that enables an offset region between the channel and source-drain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c818f974e401e84054838ba6bd8171e4
https://doi.org/10.1149/1.3481234
https://doi.org/10.1149/1.3481234
Publikováno v:
Journal of The Electrochemical Society. 157:H1
In this study, a 2 in. Ni field aided lateral crystallization FALC poly-Si thin-film transistor TFT 120 240 array was fabricated at the maximum process temperature of 500°C using an optimized current density distribution design. We investigated the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fdb03bae3d550974cd24ef7699d9d4d
https://doi.org/10.1149/1.3244212
https://doi.org/10.1149/1.3244212