Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Jung-Piao Chiu"'
Autor:
Ming-Yuan Song, Katherine Chiang, Chen Tzu-Chiang, Jin Cai, Chiang Hung-Li, Mauricio Manfrini, Jung-Piao Chiu, Tahui Wang, Chen Yu-Sheng, H.-S. Philip Wong, Carlos H. Diaz, William J. Gallagher
Publikováno v:
IEEE Transactions on Electron Devices. 67:3102-3108
To increase the density of magnetoresistive random access memory (MRAM) beyond the 1T1MTJ MRAM cell in use today, the design space for 1S1MTJ MRAM array is analyzed by cooptimizing both selectors and MTJs. Current low-resistance MTJs for 1T1MTJ MRAM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7b75aedf4f84fec2910bbf1f7492530
https://doi.org/10.1109/ted.2020.3005118
https://doi.org/10.1109/ted.2020.3005118
Publikováno v:
Bias Temperature Instability for Devices and Circuits ISBN: 9781461479086
Statistical behavior of BTI-induced high-k dielectric traps in nanometer MOSFETs is characterized. We measure individual trapped charge emission times and single-trapped charge-induced Vt shifts in BTI recovery. Statistical distributions of BTI trap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1ad7a75f414261a9aa42820ebeb1303
https://doi.org/10.1007/978-1-4614-7909-3_3
https://doi.org/10.1007/978-1-4614-7909-3_3
Publikováno v:
Applied Physics Letters. 101:082906
Individual trapped charge creations and a trap number in p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) under negative bias temperature instability (NBTI) stress are investigated. We find that the characteristic times of a trapp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9730b9e231c264d52fa388c1c8e5b55e
https://doi.org/10.1063/1.4748108
https://doi.org/10.1063/1.4748108