Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jung-Kyu Ko"'
Autor:
Dong Young Sung, No Jin Park, Jun Mo Yang, Min Gu Lee, Jung Kyu Ko, In-Soo Kim, Bee Lyong Yang
Publikováno v:
Materials Science Forum. :1371-1376
TiN thin films are widely used as a coating material due to their good mechanical and conductivity properties, high thermal properties, strong erosion and corrosion resistance. Also TiN has been used in Si devices as a diffusion barrier material for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ea4b1746569b25a7633efb7c438de66
https://doi.org/10.4028/www.scientific.net/msf.495-497.1371
https://doi.org/10.4028/www.scientific.net/msf.495-497.1371
Publikováno v:
Materials Science Forum. :1865-1868
The uniform and dense structure of thin films is influenced by the texture of films. It was good to have uniform and dense structure and bad to have an open columnar structure in TiN thin films. Therefore, the property of diffusion barrier of the TiN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2141622d93ec2f562ee77c960d4fe736
https://doi.org/10.4028/www.scientific.net/msf.475-479.1865
https://doi.org/10.4028/www.scientific.net/msf.475-479.1865
Autor:
Joong-Jung Kim, Kwan-Yong Lim, Jinwon Park, Heung-Jae Cho, Jung-Kyu Ko, Dae-Gyu Park, Tae-Ho Cha, Ins-Seok Yeo
Publikováno v:
2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).
We report the impact of atomic layer deposition (ALD)-TiN on the novel characteristics of the W/TiN/SiO/sub 2//p-Si MOS system. A damage-free direct metal gate was attained using ALD-TiN as manifested by the negligible hysteresis and low interface tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d44cb200805d37ae08bc2f19a66dd7d
https://doi.org/10.1109/vlsit.2001.934949
https://doi.org/10.1109/vlsit.2001.934949
Autor:
Kwan-Yong Lim, Dae-Gyu Park, Hee-koo Yoon, Jinwon Park, In-Seok Yeo, Heung-Jae Cho, Jung-Kyu Ko
Publikováno v:
Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc03f8ed40afd466e733c519ebc2c9bf
https://doi.org/10.7567/ssdm.2001.b-9-5
https://doi.org/10.7567/ssdm.2001.b-9-5
Autor:
Kwan-Yong Lim, In-Seok Yeo, Dae-Gyu Park, Il-Sang Choi, Jinwon Park, Heung-Jae Cho, Jung-Kyu Ko, Hee-koo Yoon, Joong-Jung Kim, Jun-Mo Yang, Jae-Young Kim
Publikováno v:
Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc332ad058a3b697d1d8e5499d83b410
https://doi.org/10.7567/ssdm.2001.b-8-3
https://doi.org/10.7567/ssdm.2001.b-8-3
Autor:
Jinwon Park, Jung-Kyu Ko, Jun-Mo Yang, Heung-Jae Cho, Joong-Jung Kim, Henk de Waard, Kwan-Yong Lim, In-Seok Yeo, Dae-Gyu Park, M. Tuominen
Publikováno v:
Journal of Applied Physics. 91:65
We report boron penetration and thermal instability of p+ polycrystalline-Si (poly-Si)/ZrO2 (100 A)/SiO2 (∼7 A)/n-Si metal-oxide-semiconductor (MOS) structures. The flatband voltage shift (ΔVFB) of the p+ poly-Si/ZrO2/SiO2/n-Si MOS capacitor as de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3e3e6ee882c688851ec717bd1c7177f
https://doi.org/10.1063/1.1419207
https://doi.org/10.1063/1.1419207
Autor:
Dae-Gyu Park, Kwan-Yong Lim, Heung-Jae Cho, Tae-Ho Cha, Joong-Jung Kim, Jung-Kyu Ko, Ins-Seok Yeo, Jin Won Park
Publikováno v:
2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184); 2001, p65-66, 2p