Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Jung-Joon Ahn"'
Publikováno v:
ECS Transactions. 72:131-138
Buried interfaces in electronics determine device properties. Characterization and control of these interfaces is the key to reliably manufacturing devices with high performance. We see an opportunity for electrical scanning probe microscope (eSPM) b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a804ed3d9b6396f14ea474ba9bacdca1
https://doi.org/10.1149/07202.0131ecst
https://doi.org/10.1149/07202.0131ecst
Publikováno v:
ECS Journal of Solid State Science and Technology. 4:N3113-N3117
In this paper, we discuss the use of broadband high frequency electromagnetic waves (RF) to non-destructively identify, classify and characterize performance-limiting defects in emerging nanoelectronic devices. As an illustration, the impact of therm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0e93f68e4218c3b7da32787c56cae9b
https://doi.org/10.1149/2.0151501jss
https://doi.org/10.1149/2.0151501jss
Publikováno v:
ECS Transactions. 61:113-121
Three dimensional stacked integrated circuits (3D-ICs), achieved using through-silicon vias (TSV), is an enabler for the continued miniaturization, increased performance and functional diversification of microelectronic devices. However, their introd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3aa53f75af9b62960868f09a62655477
https://doi.org/10.1149/06106.0113ecst
https://doi.org/10.1149/06106.0113ecst
Publikováno v:
ACS Applied Bio Materials; 10/19/2020, Vol. 3 Issue 10, p6633-6638, 6p
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 25:294-297
In this work, local oxidation behavior in phosphorous ion-implanted 4H-SiC has been investigated by using atomic force microscopy (AFM). The AFM-local oxidation (AFM-LO) has been performed on the implanted samples, with and without activation anneal,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ef2fbf19d14f4a467e477f5105ed9cb
https://doi.org/10.4313/jkem.2012.25.4.294
https://doi.org/10.4313/jkem.2012.25.4.294
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 23:767-770
In this work, we investigated the static characteristics of 4H-SiC vertical metal-oxidesemiconductor field effect transistors (VMOSFETs) by adjusting the doping level of n-epilayer and the effect of a current spreading layer (CSL), which was inserted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ca6a6a565181c2d5e6738d1f38f7736
https://doi.org/10.4313/jkem.2010.23.10.767
https://doi.org/10.4313/jkem.2010.23.10.767
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 23:513-516
In this work, a study is presented of the static characteristics of 4H-SiC DMOSFETs obtained by adjustment of the p-base region. The structure of this MOSFET was designed by the use of a device simulator (ATLAS, Silvaco.). The static characteristics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce782e211b9dd53e355c1d0ae16094c3
https://doi.org/10.4313/jkem.2010.23.7.513
https://doi.org/10.4313/jkem.2010.23.7.513
Publikováno v:
Nanoscale Research Letters
NANOSCALE RESEARCH LETTERS(7)
NANOSCALE RESEARCH LETTERS(7)
Metal, typically gold [Au], nanoparticles [NPs] embedded in a capping metal contact layer onto silicon carbide [SiC] are considered to have practical applications in changing the barrier height of the original contacts. Here, we demonstrate the use o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64095a62407877901924fc2eb64e6b81
https://doi.org/10.1186/1556-276x-7-75
https://doi.org/10.1186/1556-276x-7-75
Publikováno v:
Nanoscale Research Letters, Vol 6, Iss 1, p 235 (2011)
Nanoscale Research Letters
Nanoscale Research Letters
The effect of crystalline plane orientations of Silicon carbide (SiC) (a-, m-, and c-planes) on the local oxidation on 4H-SiC using atomic force microscopy (AFM) was investigated. It has been found that the AFM-based local oxidation (AFM-LO) rate on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7579c2e975810eb4cfcbaaaa38304cc4
https://doi.org/10.1186/1556-276x-6-235
https://doi.org/10.1186/1556-276x-6-235
Publikováno v:
Nanoscale Research Letters, Vol 6, Iss 1, p 550 (2011)
Nanoscale Research Letters
Nanoscale Research Letters
In this study, we have fabricated nano-scaled oxide structures on GaAs substrates that are doped in different conductivity types of p- and n-types and plane orientations of GaAs(100) and GaAs(711), respectively, using an atomic force microscopy (AFM)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88579ea7b0804fb84d193fbf7d7d3d01
http://www.nanoscalereslett.com/content/6/1/550
http://www.nanoscalereslett.com/content/6/1/550