Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Jung-Hwan Bang"'
Publikováno v:
Materials, Vol 16, Iss 4, p 1739 (2023)
Thermo-compression bonding (TCB) properties of Cu/SnAg pillar bumps on electroless palladium immersion gold (EPIG) were evaluated in this study. A test chip with Cu/SnAg pillar bumps was bonded on the surface-finished Cu pads with the TCB method. The
Externí odkaz:
https://doaj.org/article/443b55c5a35b4ab592144b1f8d07c633
Publikováno v:
Metals, Vol 7, Iss 12, p 540 (2017)
Solder joints are the main weak points of power modules used in harsh environments. For the power module of electric vehicles, the maximum operating temperature of a chip can reach 175 °C under driving conditions. Therefore, it is necessary to study
Externí odkaz:
https://doaj.org/article/fed9e6ef794e4f3cb8c261a733d3b05c
Publikováno v:
Clinical and Experimental Otorhinolaryngology, Vol 1, Iss 3, Pp 143-147 (2008)
ObjectivesFor a reliable interpretation of left-right difference in Vestibular evoked myogenic potential (VEMP), the amount of sternocleidomastoid muscle (SCM) contraction has to be considered. Therefore, we can ensure that a difference in amplitude
Externí odkaz:
https://doaj.org/article/70a5c0d279b643fdad338f47ff3987c3
Publikováno v:
Materials Science Forum. :2758-2764
The development of 3D integration is necessarily required for high speed, high density, small size, and multi-functional electronic devices. Through silicon via (TSV) technology has been rapidly developed to fulfill the demand of the next generation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b033b2e1e056a94b874be7bd7feacc7
https://doi.org/10.4028/www.scientific.net/msf.783-786.2758
https://doi.org/10.4028/www.scientific.net/msf.783-786.2758
Publikováno v:
Journal of the Korean Welding and Joining Society. 30:1-5
바탕으로 무연화가 성공적으로 진행되어 왔다. 친환경 규제의 산업적 범위가 확대됨에 따라 자동차 전장모듈에도 무연솔더의 적용을 요구하는 ELV (End of Life Vehicle) 법안이 2016년 1월 발효될
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8aa51ae75631e9ca618219dd36a94473
https://doi.org/10.5781/kwjs.2012.30.6.487
https://doi.org/10.5781/kwjs.2012.30.6.487
Publikováno v:
Thin Solid Films. 520:1475-1478
In this study, a simple method of fabricating a thin-film transistor (TFT) with a double-layered channel using indium–zinc-oxide (IZO) films was proposed. Two IZO films used as channel layers were consecutively deposited via sputtering without stop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3bcf79b34838c0fc4210a4461621bc2
https://doi.org/10.1016/j.tsf.2011.09.003
https://doi.org/10.1016/j.tsf.2011.09.003
Publikováno v:
Thin Solid Films. 520:1479-1483
The effect of adding hydrogen gas (H2) when depositing a zinc oxide (ZnO) thin film in a thin film transistor (TFT) using the ZnO as the channel layer on the electrical characteristics of the ZnO-TFTs, particularly the change in the characteristics a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58777eb635caeba98ed8fd7ed3d179a0
https://doi.org/10.1016/j.tsf.2011.08.051
https://doi.org/10.1016/j.tsf.2011.08.051
Autor:
Jung-Hwan Bang, Chang-Woo Lee
Publikováno v:
Journal of the Korean Welding and Joining Society. 29:95-98
Recently, there is a growing tendency that fine-pitch electronic devices are increased due to higher density and very large scale integration. Finer pitch printed circuit board(PCB) is to be decrease insulation resistance between circuit patterns and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eae98089b5c6bc4fce91b483ccb3b870
https://doi.org/10.5781/kwjs.2011.29.5.593
https://doi.org/10.5781/kwjs.2011.29.5.593
Publikováno v:
Thin Solid Films. 519:1573-1577
Presented in this study are the results of an experiment that was performed regarding the effects of plasma post-treatment on the material properties of amorphous indium zinc oxide (a-IZO) films, and on the device characteristics of the thin film tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78fafe26cc715f6c6129608fb6db5117
https://doi.org/10.1016/j.tsf.2010.08.082
https://doi.org/10.1016/j.tsf.2010.08.082
Publikováno v:
Thin Solid Films. 519:1568-1572
A zinc oxide (ZnO) thin film as a channel layer in an oxide thin film transistor (TFT) has been characterized by investigating the effects of additive gases (such as hydrogen and oxygen) during growth and plasma treatment (using argon or hydrogen) af
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f348a7cf3fc5c03f8b47f75f564f0d73
https://doi.org/10.1016/j.tsf.2010.08.088
https://doi.org/10.1016/j.tsf.2010.08.088