Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jung-Chao Hsu"'
Autor:
Jung-Chao Hsu, 徐榮照
95
This thesis mainly studies heating process of the granule bed and makes the outlet of the granule bed temperature approximately in 200oC. Using the element software of ANSYS simulates the temperature changes of the furnace, sesame and air dur
This thesis mainly studies heating process of the granule bed and makes the outlet of the granule bed temperature approximately in 200oC. Using the element software of ANSYS simulates the temperature changes of the furnace, sesame and air dur
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/74639117410114457124
Publikováno v:
Advanced Materials Research. 893:679-682
Thermolithography uses heat as the exposure source which has the possibility to generate patterns with minimum feature size exceeding the diffraction limit in photolithography. In addition, heat transport is much slower than light which allows us to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b350905c9117baf3f2e3451f1635f0b
https://doi.org/10.4028/www.scientific.net/amr.893.679
https://doi.org/10.4028/www.scientific.net/amr.893.679
Autor:
Wei-Ting Lai, Hung-Tai Chang, C. C. Wang, I. H. Chen, Jung-Chao Hsu, Pei-Wen Li, Ming-Tsung Hung, K. H. Chen, Wen-Yen Chen, Tzu-Min Hsu, Shen-Wei Lee
Publikováno v:
IEEE Transactions on Nanotechnology. 11:657-660
We demonstrate a CMOS-compatible scheme, selective oxidation of SiGe pillars, for creating well-organized 3-D Ge quantum dot (QD) array by guiding QDs migration along the oxidation path and thus placing them on targeted locations where the ultimate o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d18d85c0d7b74cac20591935a6006844
https://doi.org/10.1109/tnano.2012.2202124
https://doi.org/10.1109/tnano.2012.2202124
Publikováno v:
Applied Physics Letters. 102:101902
We present an effective approach to grow high-quality thin film of composite quantum dots (CQDs) as a building block for thermoelectric materials, in which 3 times the usual Ge deposition can be incorporated within a 3-fold CQD. Selective chemical et
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::522de9aad41a5617929ba0ae08db2d48
https://doi.org/10.1063/1.4794943
https://doi.org/10.1063/1.4794943