Výsledky vyhledávání - "Jung Jui Hsu"

Interfacial microstructure and electrical properties of PT/Al2O3/Si annealed at high temperatures

Autor: San-Yuan Chen, Chi Sheng Hsiao, Jung Jui Hsu

Publikováno v: Applied Surface Science. 238:429-432

Pb 1+ x TiO 3 (PT) thin films were deposited on Al 2 O 3 (10 nm)/Si using lead acetate trihydrate and titanium isopropoxide with the addition of glycerol (GL) chelating agent as precursors. It was found that perovskite PT phase can be well crystalliz

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2e7727bf7bdc7225b406fe156e7b5e79
https://doi.org/10.1016/j.apsusc.2004.05.166

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Forming gas annealing on physical characteristics and electrical properties of Sr0.8Bi2Ta2O9/Al2O3/Si capacitors

Autor: Jung Jui Hsu, Bang Chiang Lan, San-Yuan Chen, Jong Shing Bow

Publikováno v: Journal of Applied Physics. 94:1877-1881

Sr0.8Bi2Ta2O9 (SBT) ferroelectric film constructed on Al2O3/Si to form metal–ferroelectric–insulator–semiconductor (MFIS) was prepared to study the degradation behavior of SBT films under forming gas annealing (FGA). Although the diffusion of h

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0b8ec5f11cb8b91e7afd784be17c3f0f
https://doi.org/10.1063/1.1588362

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Dissertation/ Thesis

Effects of Forming Gas Annealing on Degradation of the Ferroelectric PZT and SBT Thin Films

Autor: Jung-Jui Hsu, 徐榮瑞

90
The SBT and PZT thin films were fabricated on Pt/Ti/SiO2/Si and Al2O3/Si substrates by using MOD process. The effects of forming gas annealing on structure and electrical properties of ferroelectric thin films annealed at 200oC~ 500oC will be

Externí odkaz: http://ndltd.ncl.edu.tw/handle/23826411825245950365

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Effect of Zr/Ti Ratios on Characterization of Pb(Zr[sub x]Ti[sub 1−x])O[sub 3] Thin Films on Al[sub 2]O[sub 3] Buffered Si for One-Transistor Memory Applications

Autor: Jung-Jui Hsu, Chia-Liang Sun, San-Yuan Chen, Albert Chin

Publikováno v: Journal of The Electrochemical Society. 150:G187

Pb(Zr x Ti 1-x )O 3 (PZT) thin films have been prepared on Al 2 O 3 /Si and PbTiO 3 /Al 2 O 3 /Si substrates, respectively. On Al 2 O 3 /Si substrates, Ti-rich PZT thin films had lower perovskite transformation temperatures than those of Zr-rich PZT

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::73f565cf51cd7adceb365a4a7943a0f3
https://doi.org/10.1149/1.1542901

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