Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Jung Joon Pyeon"'
Autor:
Youn-Hwan Shin, Inki Jung, Hyunchul Park, Jung Joon Pyeon, Jeong Gon Son, Chong Min Koo, Sangtae Kim, Chong-Yun Kang
Publikováno v:
Micromachines, Vol 9, Iss 10, p 503 (2018)
The fatigue resistance of piezoelectric PVDF has been under question in recent years. While some report that a significant degradation occurs after 106 cycles of repeated voltage input, others report that the reported degradation originates from the
Externí odkaz:
https://doaj.org/article/103c74972c044fcb9a956338b55b6449
Autor:
Ah-Jin Cho, Seung Ho Ryu, Jae Gyun Yim, In-Hwan Baek, Jung Joon Pyeon, Sung Ok Won, Seung-Hyub Baek, Chong-Yun Kang, Seong Keun Kim
Publikováno v:
Journal of Materials Chemistry C. 10:7031-7038
Atomic layer deposition of MoS2 reveals stepwise growth – ‘stop and go’ growth of MoS2 – behavior where the surface migration energy of the adsorbates is significantly enhanced.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f1cb464abb476be321286f51d136aa8
https://doi.org/10.1039/d2tc01156e
https://doi.org/10.1039/d2tc01156e
Autor:
Min Gyu Kang, Hi Gyu Moon, Woo Suk Jung, Jung Joon Pyeon, Seung Hyub Baek, Seok-Jin Yoon, Sahn Nahm, Chong Yun Kang, Myoung Sub Noh
Publikováno v:
Chemistry of Materials. 32:6483-6493
The outstanding multifunctionality of ferroelectric oxides has opened up new fields in microelectronics. However, the high crystallization temperature of the ferroelectric oxides limits their integ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8710a84763bf2e750843f555c2f7ae0
https://doi.org/10.1021/acs.chemmater.0c01742
https://doi.org/10.1021/acs.chemmater.0c01742
Autor:
Sung Ok Won, In-Hwan Baek, Hansol Lee, Seong Keun Kim, Jeong Hwan Han, Jung Joon Pyeon, Chong Yun Kang, Cheol Seong Hwang, Ga Yeon Lee, Young Geun Song, Taek-Mo Chung
Publikováno v:
Chemistry of Materials. 32:2313-2320
The synthesis of a continuous and high-quality large-area layer is a key research area in the field of two-dimensional (2D) metal chalcogenides. To date, several techniques, including chemical vapo...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1790afa10d436dc8bdb280ff902bbba1
https://doi.org/10.1021/acs.chemmater.9b04387
https://doi.org/10.1021/acs.chemmater.9b04387
Autor:
Gwang Su Kim, In-Hwan Baek, Chong Yun Kang, Young Geun Song, Taek-Mo Chung, Jung Joon Pyeon, Ga Yeon Lee, Cheol Seong Hwang, Jeong Hwan Han, Seong Keun Kim, Ah-Jin Cho
Publikováno v:
Journal of Materials Chemistry C. 8:11874-11881
Gas sensors for Internet of Things applications should meet two requisites – low power consumption and easy mounting universally. To satisfy the conditions, gas sensors need to operate at lower temperature and be flexible. In this study, we demonst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f9a19733e6d863fe3be53905f466000
https://doi.org/10.1039/d0tc02242j
https://doi.org/10.1039/d0tc02242j
Autor:
Jung Joon Pyeon, Jeong Hwan Han, Cheol Seong Hwang, Byung Joon Choi, Ga Yeon Lee, In-Hwan Baek, Seong Keun Kim, Seong Ho Han, Taek-Mo Chung
Publikováno v:
ACS Applied Materials & Interfaces. 11:14892-14901
A new deposition technique is required to grow the active oxide semiconductor layer for emerging oxide electronics beyond the conventional sputtering technique. Atomic layer deposition (ALD) has the benefits of versatile composition control, low defe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f13ff571ceb4427f473e39f5bf4422a9
https://doi.org/10.1021/acsami.9b03331
https://doi.org/10.1021/acsami.9b03331
Autor:
Jung Joon Pyeon, Chong Yun Kang, Seong Keun Kim, Jeong Hwan Han, Keun Hwa Chae, In-Hwan Baek, Weon Cheol Lim, Seung Hyub Baek, Taek-Mo Chung, Ga Yeon Lee, Jin Sang Kim, Seong Ho Han, Ji-Won Choi
Publikováno v:
Nanoscale. 10:17712-17721
Research on two-dimensional (2D) metal dichalcogenides is rapidly expanding owing to their unique characteristics that do not exist in bulk materials. The industrially compatible development of these emerging materials is indispensable to facilitate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e44a3bb464e1844f3054c0bc5fa3fc55
https://doi.org/10.1039/c8nr05450a
https://doi.org/10.1039/c8nr05450a
Autor:
Young Geun Song, Hae Ryoung Kim, Jung Joon Pyeon, Jeong Hwan Han, Jin Sang Kim, Chong Yun Kang, Seong Keun Kim, Cheol Seong Hwang, Taek-Mo Chung, Seung Hyub Baek, Ji-Won Choi, In-Hwan Baek
Publikováno v:
Chemistry of Materials. 29:8100-8110
Two-dimensional (2-D) metal chalcogenides have received great attention because of their unique properties, which are different from bulk materials. A challenge in implementing 2-D metal chalcogenides in emerging devices is to prepare a well-crystall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c81bf3989cf1ddc1334bbb87ce2baeec
https://doi.org/10.1021/acs.chemmater.7b01856
https://doi.org/10.1021/acs.chemmater.7b01856
Autor:
Chong Yun Kang, Hi Gyu Moon, Soo Deok Han, Sahn Nahm, Myoung Sub Noh, Kwang Soo Yoo, Jung Joon Pyeon, Young Seok Shim, Jin Sang Kim
Publikováno v:
Sensors and Actuators B: Chemical. 241:40-47
Vanadium dioxide (VO 2 ) as strong correlated oxide has been intensively studied due to the unique properties accompanied by metal-insulator transition (MIT) near room temperature. Their extrinsic electrical and optical transformations on MIT have be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98270afff3e80455e306f2486f7d7031
https://doi.org/10.1016/j.snb.2016.10.029
https://doi.org/10.1016/j.snb.2016.10.029
Autor:
Soo Hyun Kim, In-Hwan Baek, Da Hye Kim, Seong Keun Kim, Seung Hyub Baek, Jinsang Kim, Taek-Mo Chung, Jung Joon Pyeon, Jeong Hwan Han
Publikováno v:
Journal of Materials Chemistry C. 5:3139-3145
Here, we demonstrate high-performance p-type thin film transistors (TFTs) with a SnO channel layer grown by atomic layer deposition (ALD). The performance of the SnO TFTs relies on hole carriers and defects in SnO and near the back-channel surface of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e9b7c756e24980c0f1361c91d896b1b
https://doi.org/10.1039/c6tc04750e
https://doi.org/10.1039/c6tc04750e