Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Jung Hyeon Bae"'
Autor:
Jung Hyeon Bae, Shin Hyung Park, In Seon Lee, Jong Won Kim, Soo Hyung Jeon, Chang Wan Kang, Gyoo Yong Chi
Publikováno v:
Journal of Physiology & Pathology in Korean Medicine. 35:211-218
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31622ad3d28da500974168d4a65247f1
https://doi.org/10.15188/kjopp.2021.12.35.6.211
https://doi.org/10.15188/kjopp.2021.12.35.6.211
Publikováno v:
Current Applied Physics. 11:1067-1070
A thermite reaction between the CuO nanowires and the deposited nano-Al was studied. The heat energy obtained from the reaction was compared with that of CuO and Al nanopowders mixture. CuO nanowires were grown and patterned on glass substrate and na
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::875b1b5c0407d7b07d07f514636054bd
https://doi.org/10.1016/j.cap.2011.01.043
https://doi.org/10.1016/j.cap.2011.01.043
Publikováno v:
Thin Solid Films. 519:5771-5774
We developed a nonvolatile memory device based on a solution-processed oxide thin-film transistor (TFT) with Ag nanoparticles (NPs) as the charge trapping layer. We fabricated the device using a soluble MgInZnO active channel on a SiO2 gate dielectri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80ae846a227dc28e257829ec1b5f4c99
https://doi.org/10.1016/j.tsf.2010.12.202
https://doi.org/10.1016/j.tsf.2010.12.202
Publikováno v:
Transactions on Electrical and Electronic Materials. 11:234-237
Nanoenergetic materials were synthesized and the thermite reaction between the CuO nanowires and the deposited nano-Al by Joule heating was studied. CuO nanowires were grown by thermal annealing on a glass substrate. To produce nanoenergetic material
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::352785ab612d7c7a2f5c71a7b5c3d859
https://doi.org/10.4313/teem.2010.11.5.234
https://doi.org/10.4313/teem.2010.11.5.234
Publikováno v:
Thin Solid Films. 518:6205-6209
In this work, we investigated a new crystallization method for amorphous silicon (a-Si) using a mixture of nano-energetic materials: molybdenum oxide and aluminum (MoO 3 /Al). The purpose of using nano-energetic materials is to improve the performanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d39f0b03bb9e0d57dd2d12bbc12409b
https://doi.org/10.1016/j.tsf.2010.03.175
https://doi.org/10.1016/j.tsf.2010.03.175
Publikováno v:
Journal of Crystal Growth. 312:2335-2338
We have investigated a new crystallization technique using selective area heating (SAH) with a micro-patterned SiO 2 capping layer. The purpose of SAH is to improve performance of amorphous silicon films in the presence of glass substrates with extre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab4a8a8801dbd39e319e90cb442e58ca
https://doi.org/10.1016/j.jcrysgro.2010.05.030
https://doi.org/10.1016/j.jcrysgro.2010.05.030
Publikováno v:
Journal of Information Display. 10:117-120
A new crystallization method for amorphous silicon, called selective area heating (SAH), was proposed. The purpose of SAH is to improve the reliability of amorphous silicon films with extremely low thermal budgets to the glass substrate. The crystall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec2ede02d0a83742147d3c371e7874cf
https://doi.org/10.1080/15980316.2009.9652093
https://doi.org/10.1080/15980316.2009.9652093
Autor:
Woong Hee Jeong, Hyun Jae Kim, Jong Baek Seon, Kyung Min Kim, Dong Lim Kim, Si Joon Kim, Kyung Bae Park, Jung Hyeon Bae, You Seung Rim, Myung Kwan Ryu
Publikováno v:
Journal of the Society for Information Display. 19:620
— In this article, a solution process for oxide thin-film transistors (TFTs) at low-temperature annealing was investigated. Solution-process engineering, including materials and precursors, plays an important role in oxide thin-film deposition on l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::122dac61a36cf839483e520d78a7b6ad
https://doi.org/10.1889/jsid19.9.620
https://doi.org/10.1889/jsid19.9.620
Publikováno v:
Journal of the Society for Information Display. 19:404
— Non-volatile memory effects of an all-solution-processed oxide thin-film transistor (TFT) with ZnO nanoparticles (NPs) as the charge-trapping layer are reported. The device was fabricated by using a soluble MgInZnO active channel on a ZrHfOx gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11f90880ef2ebe010af26c139f735c0c
https://doi.org/10.1889/jsid19.5.404
https://doi.org/10.1889/jsid19.5.404
Carrier-suppressing effect of scandium in InZnO systems for solution-processed thin film transistors
Autor:
Hyun Jae Kim, Yuri Choi, Jung Hyeon Bae, Gun Hee Kim, Jae-Min Hong, Woong Hee Jeong, Jae Woong Yu
Publikováno v:
Applied Physics Letters. 97:162102
The carrier-suppressing effect of Sc in InZnO systems was studied using thin-film transistors (TFTs) with a sol-gel processed active channel. As the amount of Sc content increased, the off current decreased, and the threshold voltage shifted to a pos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::105f2e1264540d574ee923f22d960f9b
https://doi.org/10.1063/1.3503964
https://doi.org/10.1063/1.3503964