Zobrazeno 1 - 10
of 286
pro vyhledávání: '"Jung Hui Tsai"'
Publikováno v:
IEEE Access, Vol 12, Pp 50177-50183 (2024)
Novel In0.12Al0.88N/AlN/AlxGa $_{1-\mathrm {x}}\text{N}$ /In0.12Al0.88N metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) grown on a SiC substrate with a drain field-plate (DFP) were investigated. A symmetrically-graded A
Externí odkaz:
https://doaj.org/article/6fb213d6d9ba4f258f3b1441c4e031e3
Publikováno v:
IEEE Transactions on Electron Devices. 70:269-274
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90305df35bd59173b2e8ec0df0a604d8
https://doi.org/10.1109/ted.2022.3223326
https://doi.org/10.1109/ted.2022.3223326
Publikováno v:
IEEE Sensors Letters. 6:1-4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f77db6b760bf2539eab1eed11dafebb
https://doi.org/10.1109/lsens.2022.3207906
https://doi.org/10.1109/lsens.2022.3207906
Publikováno v:
IEEE Sensors Letters. 6:1-4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42f37af0c4f09904e03f9735b96ac9d5
https://doi.org/10.1109/lsens.2022.3201035
https://doi.org/10.1109/lsens.2022.3201035
Publikováno v:
Science of Advanced Materials. 13:289-293
In this article, the electrical characteristics of Al0.28Ga0.72 N/AlN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 20-nm-thick Al2O3 layer by using radio-frequency sputtering as the gate dielectric layer are compa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0cd2f0c4cff76e36a51dc1aab4133db
https://doi.org/10.1166/sam.2021.3856
https://doi.org/10.1166/sam.2021.3856
Autor:
Jung-Hui Tsai, Yue-Chang Lin, Jing-Shiuan Niu, Wen-Shiung Lour, Wen-Chau Liu, Ching-Hong Chang
Publikováno v:
Science of Advanced Materials. 13:30-35
In this work, an AlGaN/GaN enhancement-mode high electron mobility transistor (HEMT) with two-step gate recess and electroless plating (EP) approaches is reported. Scanning electron microscopy and atomic force microscopy surface analysis are used to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a35108c309fac8e56df50fd54e8ea80c
https://doi.org/10.1166/sam.2021.3823
https://doi.org/10.1166/sam.2021.3823
Publikováno v:
Semiconductors. 54:803-810
A new Pd|HfO2|AlGaN|GaN metal-oxide-semiconductor (MOS) enhancement-mode high electron mobility transistor (HEMT) is fabricated with low-temperature sensitization, activation, electroless-plating, and two-step gate-recess approaches. Experimentally,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebb87f9ef02a4f2b01e539fa30757f70
https://doi.org/10.1134/s1063782620070076
https://doi.org/10.1134/s1063782620070076
Autor:
Jing-Shiuan Niu, Po-Lin Chen, Chia-Wei Chang, Jung-Hui Tsai, Kun-Wei Lin, Wei-Chou Hsu, Wen-Chau Liu
Publikováno v:
Sensors and Actuators B: Chemical. 377:133091
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::937b6632b185653c48c91418f84723f8
https://doi.org/10.1016/j.snb.2022.133091
https://doi.org/10.1016/j.snb.2022.133091
Publikováno v:
Sensors and Actuators B: Chemical. 371:132589
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3652a4ca444721a850f3d02c9afefe0a
https://doi.org/10.1016/j.snb.2022.132589
https://doi.org/10.1016/j.snb.2022.132589
Publikováno v:
Sensors and Actuators B: Chemical. 369:132241
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64f0bd2351e589169dc9aa3a6d1c6784
https://doi.org/10.1016/j.snb.2022.132241
https://doi.org/10.1016/j.snb.2022.132241