Zobrazeno 1 - 10
of 143
pro vyhledávání: '"Jung Hae, Choi"'
Autor:
Narendra S. Parmar, Haena Yim, Lynn A. Boatner, Panithan Sriboriboon, Yunseok Kim, Kyung Song, Jung‐Hae Choi, In Won Yeu, Ji‐Won Choi
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 7, Pp n/a-n/a (2023)
Abstract Three‐dimensional (3D) charge‐written periodic peak and valley nanoarray surfaces are fabricated on a (112¯0) ZnO single crystal grown via chemical vapor transport. Because the grown ZnO crystals exhibit uniform n‐type conduction, 3D
Externí odkaz:
https://doaj.org/article/8db35af0d2274809a4b7febfbf3effa4
Autor:
Yan Cheng, Zhaomeng Gao, Kun Hee Ye, Hyeon Woo Park, Yonghui Zheng, Yunzhe Zheng, Jianfeng Gao, Min Hyuk Park, Jung-Hae Choi, Kan-Hao Xue, Cheol Seong Hwang, Hangbing Lyu
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
HfO2-based ferroelectric films are attracting a great deal of attention. Here, the authors conclude that the performance degradation and the possible rejuvenation are ascribed to the reversible transition between polar and antipolar phases.
Externí odkaz:
https://doaj.org/article/a3c17d53ddd74e79bf13620108134c18
Publikováno v:
Advanced Intelligent Systems, Vol 4, Iss 4, Pp n/a-n/a (2022)
This work provides a comprehensive analytical analysis of one‐selector‐one‐resistor (1S1R) crossbar array (CBA) device for hardware neural network (HNN) applications. Simplified analytical device models are prepared from a particular 1S1R devic
Externí odkaz:
https://doaj.org/article/f8b7e5c1cc424b9c99c2f5c3efd795aa
Autor:
Eunjung Ko, Jung-Hae Choi
Publikováno v:
Materials Research Express, Vol 9, Iss 4, p 045005 (2022)
Recently, to improve the performance of an integrated metal-oxide-semiconductor (MOS) device, an attempt has been made in the industry to replace the amorphous oxide with a crystalline oxide. However, various characteristics caused by the difference
Externí odkaz:
https://doaj.org/article/ebe31cf073d348b0b1c187eee6f4a316
Autor:
Kwang-Chon Kim, Joohwi Lee, Byung Kyu Kim, Won Young Choi, Hye Jung Chang, Sung Ok Won, Beomjin Kwon, Seong Keun Kim, Dow-Bin Hyun, Hyun Jae Kim, Hyun Cheol Koo, Jung-Hae Choi, Dong-Ik Kim, Jin-Sang Kim, Seung-Hyub Baek
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-6 (2016)
Grain boundaries in polycrystalline materials may offer the opportunity to explore physical phenomena that do not normally occur within the crystal grains. Here, the authors show that twin boundaries in Bi2Te3works as an electron supply for the whole
Externí odkaz:
https://doaj.org/article/db5c51e14d0f4c30a1d9bcfabbf7b41a
Autor:
Chanyoung, Yoo, Jeong Woo, Jeon, Seungjae, Yoon, Yan, Cheng, Gyuseung, Han, Wonho, Choi, Byongwoo, Park, Gwangsik, Jeon, Sangmin, Jeon, Woohyun, Kim, Yonghui, Zheng, Jongho, Lee, Junku, Ahn, Sunglae, Cho, Scott B, Clendenning, Ilya V, Karpov, Yoon Kyung, Lee, Jung-Hae, Choi, Cheol Seong, Hwang
Publikováno v:
Advanced materials (Deerfield Beach, Fla.).
Atomic layer deposition (ALD) of Sb
Publikováno v:
Journal of Materials Chemistry C. 9:851-859
The solid solution of BexMg1−xO is examined as a candidate for high-κ dielectric materials by considering the dielectric constant, bandgap, and phase stability at the same time. Using ab initio calculations including phonon calculations, the subtl
A STUDY OF THE PRESSURE SOLUTION AND DEFORMATION OF QUARTZ CRYSTALS AT HIGH pH AND UNDER HIGH STRESS
Publikováno v:
Nuclear Engineering and Technology, Vol 45, Iss 1, Pp 53-60 (2013)
Bentonite is generally used as a buffer material in high-level radioactive waste disposal facilities and consists of 50% quartz by weight. Quartz strongly affects the behavior of bentonite over very long periods. For this reason, quartz dissolution e
Externí odkaz:
https://doaj.org/article/d6d8306274a04a5385919457889ba6fa
Publikováno v:
Electronics Letters. 56:528-531
The lack of patient effort during robot-assisted gait training (RAGT) is thought to be the main factor behind unsatisfactory rehabilitative efficacy among hemiparetic stroke patients. A key milestone to implement patient-driven RAGT is to predict gai
Publikováno v:
Nanoscale. 12:17703-17714
This study provides an ab initio thermodynamics approach to take a step forward in the theoretical modeling on the growth of GaAs nanowires. In order to understand the effects of growth conditions on the involvement of stacking faults and polytypism,