Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration

Autor: Michael Engel, Damon B. Farmer, Jaione Tirapu Azpiroz, Jung-Woo T. Seo, Joohoon Kang, Phaedon Avouris, Mark C. Hersam, Ralph Krupke, Mathias Steiner

Publikováno v: Nature Communications, Vol 9, Iss 1, Pp 1-7 (2018)

The placement of nanomaterials at predefined locations is a key requirement for their integration in nanoelectronic devices. Here, the authors devise a method allowing placement of solution-based nanomaterials by using structured graphene layers as d

Externí odkaz: https://doaj.org/article/cb5a4df863e04d9d9191cfdf2e582df5

Fully Inkjet-Printed, Mechanically Flexible MoS2 Nanosheet Photodetectors

Autor: Ethan B. Secor, Vinod K. Sangwan, Shay G. Wallace, Mark C. Hersam, Jung Woo T. Seo, Jian Zhu

Publikováno v: ACS Applied Materials & Interfaces. 11:5675-5681

Solution-processed two-dimensional materials offer a scalable route toward next-generation printed devices. In this report, we demonstrate fully inkjet-printed photodetectors using molybdenum disulfide (MoS2) nanosheets as the active material and gra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::802feaced163e7a058e4bc5f827b4565
https://doi.org/10.1021/acsami.8b19817

Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration

Autor: Damon B. Farmer, Ralph Krupke, Mark C. Hersam, Jaione Tirapu Azpiroz, Phaedon Avouris, Michael Engel, Joohoon Kang, Jung Woo T. Seo, Mathias Steiner

Publikováno v: Nature Communications, Vol 9, Iss 1, Pp 1-7 (2018)
Nature Communications
Nature Communications, 9 (1), Article number: 4095

Controlled placement of nanomaterials at predefined locations with nanoscale precision remains among the most challenging problems that inhibit their large-scale integration in the field of semiconductor process technology. Methods based on surface f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c35b9b882c8bd26b72526c2fee29ee9
http://link.springer.com/article/10.1038/s41467-018-06604-4

Room temperature Mott metal–insulator transition in V2O3 compounds induced via strain-engineering

Autor: S. Peters, Jean-Pierre Locquet, Pia Homm, Jung Woo T. Seo, Mariela Menghini

Publikováno v: Repositorio Institucional del Instituto Madrileño de Estudios Avanzados en Nanociencia
instname
APL Materials, Vol 9, Iss 2, Pp 021116-021116-9 (2021)

Vanadium sesquioxide (V2O3) is an archetypal Mott insulator in which the atomic positions and electron correlations change as temperature, pressure, and doping are varied, giving rise to different structural, magnetic, or electronic phase transitions

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3c9a31ce9d367327b11079465932cae
https://doi.org/10.1063/5.0035865

Hot Spot Dynamics in Carbon Nanotube Array Devices

Autor: Phaedon Avouris, Michael Engel, Mark C. Hersam, Jung Woo T. Seo, Mathias Steiner

Publikováno v: Nano Letters. 15:2127-2131

We report on the dynamics of spatial temperature distributions in aligned semiconducting carbon nanotube array devices with submicrometer channel lengths. By using high-resolution optical microscopy in combination with electrical transport measuremen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e87e1e3d21ff963f9057cbadb7071e4
https://doi.org/10.1021/acs.nanolett.5b00048