Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Jung‐Fang Chang"'
Autor:
Jung-Fang Chang, 張榮芳
90
Transparent and conductive ZnO:Al thin films were prepared by reactive RF magnetron sputtering. The electronic conductivity was improved by controlling the deposition parameters and post-annealing treatment while the relationship between the
Transparent and conductive ZnO:Al thin films were prepared by reactive RF magnetron sputtering. The electronic conductivity was improved by controlling the deposition parameters and post-annealing treatment while the relationship between the
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/46787972681512855918
Autor:
Ming-Yen Tsai, Tien-Yu Hsieh, Cheng-Hsu Chou, Jung-Fang Chang, Ting-Chang Chang, Po-Yung Liao, Bo-Wei Chen, Ann-Kuo Chu
Publikováno v:
Thin Solid Films. 603:359-362
The degree of degradation between the amorphous-indium–gallium–zinc oxide (a-IGZO) thin film transistor (TFT) using the top-gate only or bottom-gate only is compared. Under negative gate bias illumination stress (NBIS), the threshold voltage (V T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47a1822fae5d37b1c2b67c86b645051e
https://doi.org/10.1016/j.tsf.2016.01.035
https://doi.org/10.1016/j.tsf.2016.01.035
Autor:
Cheng Hsu Chou, Shao Zhi Deng, Ya-Hsiang Tai, Man Chun Yang, Jung Fang Chang, Hua Mao Chen, Yu Chun Chen, Ting-Chang Chang
Publikováno v:
IEEE Transactions on Electron Devices. 61:3186-3190
In this paper, amorphous InGaZnO 4 thin-film transistors with an asymmetric structure exhibit ultraviolet (UV) light sensing property. At the offset region near the drain electrode, the extended active layer plays the role of a resistor. However, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df278623df626953bf47ef3c31bcd53d
https://doi.org/10.1109/ted.2014.2336235
https://doi.org/10.1109/ted.2014.2336235
Autor:
Jung-Fang Chang, Ting-Chang Chang, Ming-Yen Tsai, Wang-Cheng Chung, Yu-Te Chen, Ann-Kuo Chu, Bo-Wei Chen, Te-Chih Chen, Cheng-Hsu Chou, Po-Yung Liao, Yu Chun Chen, Tien-Yu Hsieh
Publikováno v:
IEEE Transactions on Electron Devices. 60:1681-1688
Electrical characteristics and the effect of hotcarriers are investigated in via-contact-type a-InGaZnO thinfilm transistors. Current-voltage as well as capacitance-voltage measurements are utilized to investigate the impact of top gate bias on devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d6ba6d272dfd8d45c8960441088b6d1
https://doi.org/10.1109/ted.2013.2253611
https://doi.org/10.1109/ted.2013.2253611
Autor:
Cheng-Hsu Chou, Yu-Te Chen, Po-Yung Liao, Ann-Kuo Chu, Ming-Yen Tsai, Bo-Wei Chen, Wang-Cheng Chung, Yu Chun Chen, Tien-Yu Hsieh, Te-Chih Chen, Jung-Fang Chang, Ting-Chang Chang
Publikováno v:
IEEE Electron Device Letters. 34:638-640
The effect of hot carriers on the characteristics of via-contact-type amorphous In-Ga-Zn-O thin-film transistors is investigated. After hot-carrier stress, the gate-to-source capacitance curve shows a two-stage rise while the gate-to-drain capacitanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18315fb95a61168c3e4bb58a4fd65b1a
https://doi.org/10.1109/led.2013.2248341
https://doi.org/10.1109/led.2013.2248341
Publikováno v:
Thin Solid Films. 322:319-322
We report on the annealing effects of gold thin films deposited on silicon by analyzing the FTIR, AFM and d.c. conductivity, before and after annealing. FTIR spectra show higher IR transmission for samples after short time annealing, but the transmis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7f586dbf1e072408faa0508020da181
https://doi.org/10.1016/s0040-6090(97)01008-0
https://doi.org/10.1016/s0040-6090(97)01008-0
Publikováno v:
Ceramics International. 24:265-272
SiCTiC in-situ composites have been synthesized by low pressure chemical vapour deposition on graphite with SiCl4, TiCl4 C3H8 and H2 reaction gases to improve the toughness of SiCTiC ceramics. The composite was deposited at various temperatures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe675c0590549ad81a856adb66441ad3
https://doi.org/10.1016/s0272-8842(97)00008-4
https://doi.org/10.1016/s0272-8842(97)00008-4
Autor:
Yi-Hsien Tu, Ming-Yen Tsai, Cheng-Hsu Chou, Ann-Kuo Chu, Bo-Wei Chen, Tien-Yu Hsieh, Jung-Fang Chang, Ting-Chang Chang, Po-Yung Liao
Publikováno v:
Japanese Journal of Applied Physics. 54:094101
Behaviors of carrier transport in amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors are investigated. It is found that the electron mobility is higher at elevated temperatures, which is contrary to that in crystalline Si devices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1215085a92039a09269b704d3243454d
https://doi.org/10.7567/jjap.54.094101
https://doi.org/10.7567/jjap.54.094101
Autor:
Yu Chun Chen, Ting-Chang Chang, Jung Fang Chang, Wang Cheng Chung, Ya-Hsiang Tai, Cheng Hsu Chou, Chang Pei Wu, Tien-Yu Hsieh, Hung Wei Li, Te Chih Chen
Publikováno v:
Applied Physics Letters. 101:223502
This study investigates the suppressed negative gate bias illumination stress (NBIS) -induced instability of via-type amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) with fringe field (FF) structures. The less negative thres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c659bb0f6d06ccbbdd32c000d612fc91
https://doi.org/10.1063/1.4767996
https://doi.org/10.1063/1.4767996
Autor:
Ku‐Hsien Chang, Mao‐Sung Wu, Chih‐Hsiang Chang, Pou‐Chi Chang, Pin‐Chi Julia Chiang, Hsiu‐Chien Tsai, Lieh‐Chiu Lin, Chun‐Cheng Cheng, M. D. Chen, Tzong‐Ming Lee, Hsiang‐Hung Chang, Horng-Long Tyan, Chia‐Pao Chang, Tai‐Hung Chen, Fang‐Tsun Chu, I.‐Hsuan Pen, Chi‐Chang Liao, Chang‐Ho Liou, J. F. Huang, Jung‐Fang Chang, Li‐Cheng Shen, Kang‐Hung Lin
Publikováno v:
SID Symposium Digest of Technical Papers. 36:1156
In this paper we will outline our progress towards developing flexible electronics. The basic function of this flexible device is timepiece. The ultra thin flexible electronic device (e-skin IT device).with TFTs made by CMOS type low temperature poly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cca47c03a25cbadd29a407f29f7ecc60
https://doi.org/10.1889/1.2036206
https://doi.org/10.1889/1.2036206