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Enhancement of Conformality of Silicon Nitride Thin Films by ABC‐Type Atomic Layer Deposition.

Autor: Kim, Jiwon, Yeon, Changbong, Cho, Deok‐Hyun, Jung, Jaesun, Shong, Bonggeun

Publikováno v: Advanced Electronic Materials; Mar2024, Vol. 10 Issue 3, p1-8, 8p

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Wide process temperature of atomic layer deposition for In 2 O 3 thin-film transistors using novel indium precursor (N,N'-di-tert butylacetimidamido)dimethyllindium.

Autor: Lee JH; Reality Devices Research Division, Electronics and Telecommunication Research Institute (ETRI), Daejeon 34129, Republic of Korea.; Semiconductor and Advanced Device Engineering, ICT, University of Science and Technology (UST), Daejeon 34113, Republic of Korea., Kang SY; Reality Devices Research Division, Electronics and Telecommunication Research Institute (ETRI), Daejeon 34129, Republic of Korea., Yeon C; TF Material Dev.Team, Soulbrain Co., Ltd, Gongju-city 3598, Republic of Korea., Yang JH; Reality Devices Research Division, Electronics and Telecommunication Research Institute (ETRI), Daejeon 34129, Republic of Korea., Jung J; TF Material Dev.Team, Soulbrain Co., Ltd, Gongju-city 3598, Republic of Korea., Tan KC; TF Material Dev.Team, Soulbrain Co., Ltd, Gongju-city 3598, Republic of Korea., Kim K; Advanced Analysis & Data Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.; Department of Physics and van der Waals Materials Research Center, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea., Yi Y; Department of Physics and van der Waals Materials Research Center, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea., Park S; Advanced Analysis & Data Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.; Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea., Hwang CS; Reality Devices Research Division, Electronics and Telecommunication Research Institute (ETRI), Daejeon 34129, Republic of Korea., Moon J; Reality Devices Research Division, Electronics and Telecommunication Research Institute (ETRI), Daejeon 34129, Republic of Korea.; Semiconductor and Advanced Device Engineering, ICT, University of Science and Technology (UST), Daejeon 34113, Republic of Korea.

Publikováno v: Nanotechnology [Nanotechnology] 2024 Jun 26; Vol. 35 (37). Date of Electronic Publication: 2024 Jun 26.