Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Junekyun Park"'
Publikováno v:
Applied Sciences, Vol 10, Iss 17, p 6081 (2020)
We demonstrated the way to improve the characteristics of quantum dot light emitting diodes (QD-LEDs) by adding a simple step to the conventional fabrication process. For instance, we can effectively deactivate the surface defects of quantum dot (QD)
Externí odkaz:
https://doaj.org/article/0e9a11412dc947e981ce3fc0ff1ec2e1
Publikováno v:
Current Applied Physics. 38:81-90
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9c0c93f62b27f2b45c70aa06e7e638b
https://doi.org/10.1016/j.cap.2022.03.007
https://doi.org/10.1016/j.cap.2022.03.007
Autor:
Kihyun Choi, Hyun Chul Sagong, Wonchang Kang, Hyunjin Kim, Jiang Hai, Miji Lee, Bomi Kim, Mi-ji Lee, Soonyoung Lee, Hyewon Shim, Junekyun Park, Youngwoo Cho, Hwasung Rhee, Sangwoo Pae
Publikováno v:
IEEE Transactions on Electron Devices. 66:5399-5403
In this article, we report the reliability characterization of 7-nm technology, in which the highly scaled sixth generation of FinFETs and 256-Mb static random access memory (SRAM) cells were newly developed by featuring extreme ultraviolet (EUV). Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3ac446006f81966c9b6356d809ebb07
https://doi.org/10.1109/ted.2019.2950008
https://doi.org/10.1109/ted.2019.2950008
Autor:
Jaewon Jeong, Seokwon Jeong, Junekyun Park, Sanghyun Lee, Juhyung Kim, Yonghan Roh, Jaehyun Kim
Publikováno v:
Journal of Nanoscience and Nanotechnology. 19:6152-6157
To solve charge-imbalanced problem caused by excessive electron injection into the emitting layer (EML) of quantum dot light emitting diodes (QLEDs) with ZnO electron transport layer (ETL), we proposed QLEDs with TPBi((2,2',2''-(1,3,5-Benzinetriyl)-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2dbb76f107d0111c66fdda0a5b1ceff1
https://doi.org/10.1166/jnn.2019.17020
https://doi.org/10.1166/jnn.2019.17020
Autor:
Hyewon Shim, Hyunchul Sagong, Junekyun Park, Jinju Kim, Hwa-Sung Rhee, Hai Jiang, Eun-Cheol Lee, Kihyun Choi
Publikováno v:
IRPS
Time dependent variability has become a significant concern for End-of-lifetime(EOL) reliability prediction for advanced technology with continuous scaling. In this work, we explore time dependent variability of BTI and HCI on our advanced FinFET tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8304388604ba85cbf4b415ebb79b07a3
https://doi.org/10.1109/irps46558.2021.9405129
https://doi.org/10.1109/irps46558.2021.9405129
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
In this paper, we report the extensive reliability characterization and modeling of multiple FinFET technology generations. Comprehensive study on intrinsic reliability of the FinFET such as hot carrier injection (HCI), bias temperature instability (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f2922bdff54bb8d18ac97f6e6ade2e4
https://doi.org/10.1109/edtm47692.2020.9117835
https://doi.org/10.1109/edtm47692.2020.9117835
Autor:
Hwa-Sung Rhee, Tae-Young Jeong, Junekyun Park, Hyewon Shim, Brandon Lee, Taiki Uemura, Yoohwan Kim, Hyunchul Sagong, Yongsung Ji, Sangwoo Pae, Jinju Kim, Dongkyun Kwon, Hai Jiang
Publikováno v:
IRPS
Self-heating effect (SHE, ∆T sh ) has become a significant concern for device performance, variability and reliability co-optimization due to more confined layout geometry and lower-thermal-conductivity materials adopted in advanced technology, whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6521431ade2f3e6169f88462c53fb75
https://doi.org/10.1109/irps45951.2020.9128322
https://doi.org/10.1109/irps45951.2020.9128322
Publikováno v:
IRPS
Localized layout effect (LLE) has become a significant concern for device area, performance and reliability co-optimization due to more compact layout footprint in advanced technology, which brings about complex strain effect in the channel. In this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81662716ea8f06b0f19f0760a5877cda
https://doi.org/10.1109/irps.2019.8720409
https://doi.org/10.1109/irps.2019.8720409
Autor:
Hyunjun Choi, Sang-chul Shin, Jinseok Kim, Han-Byul Kang, Tae-Young Jeong, Jae-Won Chang, Myung Soo Yeo, Sangkwon Park, Sangwoo Pae, Jo Yoon-Kyeong, Junekyun Park
Publikováno v:
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
In this study, we investigated electromigration characteristics of wafer-level-packaging solder joint upon temperature cycling stress and failure mechanism will be discussed quantitatively for the first time using non-destructive 3-dimensional X-ray
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::189f40c34b8b9b3e157a2c3a49c5ef88
https://doi.org/10.1109/ipfa.2018.8452493
https://doi.org/10.1109/ipfa.2018.8452493
Autor:
Sang-chul Shin, Jinju Kim, Hyunchul Sagong, Minhyuck Choi, Ukjin Jung, Sangwoo Pae, Hyun-Jin Kim, Minjung Jin, Junekyun Park
Publikováno v:
IRPS
A systematic study of HK/MG TDDB on FinFETs are discussed on this paper. In addition to conventional inversion based TDDB modeling, accumulation mode and AC TDDB are also important for correctly assessing product level gate oxide dppms and remove con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e9ad79cf416735443e8d350cacd726e
https://doi.org/10.1109/irps.2018.8353577
https://doi.org/10.1109/irps.2018.8353577