Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Jundong, Zeng"'
Publikováno v:
In Journal of Manufacturing Processes April 2022 76:638-645
Autor:
Gaofang Li, Jie Tan, Yanxia Xu, Haoyang Cui, Bo Tang, Zhejing Jiao, Wei Zhou, Jundong Zeng, Nenghong Xia
Publikováno v:
Photonics, Vol 10, Iss 3, p 298 (2023)
With the working frequency of wireless communication systems moving to a higher terahertz (THz) band, the design of high-performance THz wave modulators has become a pivotal issue to be tackled urgently in THz communication. In this paper, we design
Externí odkaz:
https://doaj.org/article/7897297423094ecdafb98e54678858e5
Publikováno v:
Welding in the World. 66:2377-2388
Autor:
Qiuhui Wang, Xuguo Zhang, Jie Xu, Zixin Chen, Xuliang Kuang, Jundong Zeng, Weijing Liu, Wei Bai, Xiaodong Tang
Publikováno v:
physica status solidi (a). 219:2100674
Autor:
Qinzhen Shi, Meilin Gu, Huang Qiong, Yifang Li, Jundong Zeng, Tiandi Fan, Xiaojun Song, Petro Moilanen, Dean Ta
Publikováno v:
Chinese Physics B. 31:074301
Ultrasonic guided waves (UGWs), which propagate throughout the entire thickness of cortical bone, are attractive for the early diagnosis of osteoporosis. However, this is challenging due to the impact of soft tissue and the inherent difficulties rela
Publikováno v:
The Scientific World Journal, Vol 2013 (2013)
The electrical modulation properties of the output intensity of two-photon absorption (TPA) pumping were analyzed in this paper. The frequency dispersion dependence of TPA and the electric field dependence of TPA were calculated using Wherrett theory
Externí odkaz:
https://doaj.org/article/637e8792a39c485da9b849b43021492c
Publikováno v:
Optical and Quantum Electronics. 46:1359-1364
In this paper, experimental investigation of the photovoltaic effect of metal/semiconductor (M/S) interface in HgCdTe pixel arrays are reported. The transient photovoltaic (TPV) response was measured by using a pulsed laser under illumination of stea
Publikováno v:
Optical and Quantum Electronics. 46:1189-1194
The variation of two-photon absorption (TPA) coefficient $$\beta _{\mathrm{TPA}} (\omega )$$ of Si excited at difference photon energy was investigated. The TPA coefficient was measured by using a picosecond pulsed laser with the wavelength could be
Publikováno v:
Optical and Quantum Electronics. 45:635-640
The changed polarity of transient photovoltage (TPA) from negative to positive induced by ultra fast lasers illumination is studied in the HgCdTe p-n junction photovoltage detector. The negative photovoltaic-response decrease obviously and even disap
Publikováno v:
Optical and Quantum Electronics. 45:629-634
This paper presents an experimental study of minority carrier lifetime and recombination mechanisms in HgCdTe photodiode. The excitation light source is a wavelength-tunable pulsed infrared laser. A constant background illumination has been introduce