Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Junding, Zheng"'
Autor:
Ping-Chun Wu, Chia-Chun Wei, Qilan Zhong, Sheng-Zhu Ho, Yi-De Liou, Yu-Chen Liu, Chun-Chien Chiu, Wen-Yen Tzeng, Kuo-En Chang, Yao-Wen Chang, Junding Zheng, Chun-Fu Chang, Chien-Ming Tu, Tse-Ming Chen, Chih-Wei Luo, Rong Huang, Chun-Gang Duan, Yi-Chun Chen, Chang-Yang Kuo, Jan-Chi Yang
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-10 (2022)
It is challenging to construct lateral homostructures with controllable geometry and repeated alternating configurations. Here the authors develop a generic approach for fabricating twisted lateral homostructures with tunable crystal orientation, epi
Externí odkaz:
https://doaj.org/article/389747fe4fc04b479396688904c4e1e3
Autor:
Yu-Hong Lai, Pao-Wen Shao, Chang-Yang Kuo, Cheng-En Liu, Zhiwei Hu, Chen Luo, Kai Chen, Florin Radu, Yong-Jyun Wang, Junding Zheng, Chungang Duan, Chun-Fu Chang, Li Chang, Yi-Chun Chen, Sang-Wook Cheong, Ying-Hao Chu
Publikováno v:
Acta Materialia. 243:118509
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94ccaf6beeead80584ea58d8393c9964
https://doi.org/10.1016/j.actamat.2022.118509
https://doi.org/10.1016/j.actamat.2022.118509
Autor:
Yi-De, Liou, Sheng-Zhu, Ho, Wen-Yen, Tzeng, Yu-Chen, Liu, Ping-Chun, Wu, Junding, Zheng, Rong, Huang, Chun-Gang, Duan, Chang-Yang, Kuo, Chih-Wei, Luo, Yi-Chun, Chen, Jan-Chi, Yang
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 33(5)
Multiferroics-materials that exhibit coupled ferroic orders-are considered to be one of the most promising candidate material systems for next-generation spintronics, memory, low-power nanoelectronics and so on. To advance potential applications, app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::4401d829ac4b004abbb3d131114542b2
https://pubmed.ncbi.nlm.nih.gov/33336516
https://pubmed.ncbi.nlm.nih.gov/33336516
Publikováno v:
Applied Surface Science. 435:265-270
The diodes of nanocrystalline SiC on epitaxial crystalline (n−/n+)6H-SiC wafers were investigated, where the (n+)6H-SiC layer was treated as cathode. For the first unit, a heavily boron doped SiC film as anode was directly deposited by plasma enhan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::797e48709fbd8f3568beb9578410ba33
https://doi.org/10.1016/j.apsusc.2017.11.099
https://doi.org/10.1016/j.apsusc.2017.11.099
Publikováno v:
Surface and Coatings Technology. 320:178-182
Surge suppressed by (p + )nanocrystalline SiC islands buried in cathode junction of operating (p + )nanocrystalline/(n − )crystalline/(n + )nanocrystalline Si fast recovery diode was studied in this paper. The proposed diode was prepared by plasma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0af47586aae4ce07b294c49959263450
https://doi.org/10.1016/j.surfcoat.2017.01.060
https://doi.org/10.1016/j.surfcoat.2017.01.060
Publikováno v:
Superlattices and Microstructures. 152:106844
The SiC hetero-polytypes with perfect interfaces and no diffusion pollution are adopted to innovatively design the impact ionization avalanche transit-time (IMPATT) diodes. The performance of DC, large-signal and noise of the proposed diodes operatin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9d3c34dc86f2b33baba59db1eab1e49
https://doi.org/10.1016/j.spmi.2021.106844
https://doi.org/10.1016/j.spmi.2021.106844