Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Junding, Zheng"'
Autor:
Ping-Chun Wu, Chia-Chun Wei, Qilan Zhong, Sheng-Zhu Ho, Yi-De Liou, Yu-Chen Liu, Chun-Chien Chiu, Wen-Yen Tzeng, Kuo-En Chang, Yao-Wen Chang, Junding Zheng, Chun-Fu Chang, Chien-Ming Tu, Tse-Ming Chen, Chih-Wei Luo, Rong Huang, Chun-Gang Duan, Yi-Chun Chen, Chang-Yang Kuo, Jan-Chi Yang
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-10 (2022)
It is challenging to construct lateral homostructures with controllable geometry and repeated alternating configurations. Here the authors develop a generic approach for fabricating twisted lateral homostructures with tunable crystal orientation, epi
Externí odkaz:
https://doaj.org/article/389747fe4fc04b479396688904c4e1e3
Autor:
Yu-Hong Lai, Pao-Wen Shao, Chang-Yang Kuo, Cheng-En Liu, Zhiwei Hu, Chen Luo, Kai Chen, Florin Radu, Yong-Jyun Wang, Junding Zheng, Chungang Duan, Chun-Fu Chang, Li Chang, Yi-Chun Chen, Sang-Wook Cheong, Ying-Hao Chu
Publikováno v:
Acta Materialia. 243:118509
Autor:
Yi-De, Liou, Sheng-Zhu, Ho, Wen-Yen, Tzeng, Yu-Chen, Liu, Ping-Chun, Wu, Junding, Zheng, Rong, Huang, Chun-Gang, Duan, Chang-Yang, Kuo, Chih-Wei, Luo, Yi-Chun, Chen, Jan-Chi, Yang
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 33(5)
Multiferroics-materials that exhibit coupled ferroic orders-are considered to be one of the most promising candidate material systems for next-generation spintronics, memory, low-power nanoelectronics and so on. To advance potential applications, app
Publikováno v:
Applied Surface Science. 435:265-270
The diodes of nanocrystalline SiC on epitaxial crystalline (n−/n+)6H-SiC wafers were investigated, where the (n+)6H-SiC layer was treated as cathode. For the first unit, a heavily boron doped SiC film as anode was directly deposited by plasma enhan
Publikováno v:
Surface and Coatings Technology. 320:178-182
Surge suppressed by (p + )nanocrystalline SiC islands buried in cathode junction of operating (p + )nanocrystalline/(n − )crystalline/(n + )nanocrystalline Si fast recovery diode was studied in this paper. The proposed diode was prepared by plasma
Publikováno v:
Superlattices and Microstructures. 152:106844
The SiC hetero-polytypes with perfect interfaces and no diffusion pollution are adopted to innovatively design the impact ionization avalanche transit-time (IMPATT) diodes. The performance of DC, large-signal and noise of the proposed diodes operatin
Autor:
Wu, Ping-Chun, Wei, Chia-Chun, Zhong, Qilan, Ho, Sheng-Zhu, Liou, Yi-De, Liu, Yu-Chen, Chiu, Chun-Chien, Tzeng, Wen-Yen, Chang, Kuo-En, Chang, Yao-Wen, Zheng, Junding, Chang, Chun-Fu, Tu, Chien-Ming, Chen, Tse-Ming, Luo, Chih-Wei, Huang, Rong, Duan, Chun-Gang, Chen, Yi-Chun, Kuo, Chang-Yang, Yang, Jan-Chi
Publikováno v:
Nature Communications; 5/10/2022, Vol. 13 Issue 1, p1-10, 10p
Autor:
Liou, Yi‐De, Ho, Sheng‐Zhu, Tzeng, Wen‐Yen, Liu, Yu‐Chen, Wu, Ping‐Chun, Zheng, Junding, Huang, Rong, Duan, Chun‐Gang, Kuo, Chang‐Yang, Luo, Chih‐Wei, Chen, Yi‐Chun, Yang, Jan‐Chi
Publikováno v:
Advanced Materials; 2/4/2021, Vol. 33 Issue 5, p1-1, 1p
Autor:
Min Lu
Selected peer-reviewed full text papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2019)Selected peer-reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2019), Ju
Autor:
Min Lu
Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018)Selected, peer reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018), July 9-12, 2018, Beijing, China