Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Junction and barrier diodes"'
Publikováno v:
IET Power Electronics, Vol 14, Iss 15, Pp 2519-2533 (2021)
Abstract This paper deals with a family of two‐ and three‐windings coupled inductor‐based impedance source networks. They have been basically derived from the successful quasi‐Y‐source network (q‐YSN) by replacing one of its capacitors wi
Externí odkaz:
https://doaj.org/article/cfa047eca0754a2db32993eb629a94e0
Publikováno v:
Micro & Nano Letters, Vol 16, Iss 12, Pp 591-600 (2021)
Abstract This paper proposes a vertical trapezoidal GaN p‐n diode with a high‐K/low‐K compound dielectric (CD‐TGD) to improve the breakdown voltage (BV). By introducing the compound dielectric structure, a new peak of electric field will be i
Externí odkaz:
https://doaj.org/article/2950328351ee4c01b4de167c441e0a32
Publikováno v:
IET Power Electronics, Vol 14, Iss 11, Pp 2021-2026 (2021)
Abstract In this paper, a novel silicon carbide (SiC) trench metal oxide semiconductor field effect transistor (MOSFET) with improved reverse recovery charge and switching energy loss is proposed and investigated utilising ISE‐TCAD simulations. The
Externí odkaz:
https://doaj.org/article/cd455fd5291645d08306205814c637f5
Publikováno v:
Electronics Letters, Vol 57, Iss 25, Pp 1001-1003 (2021)
Abstract Resonant tunnelling diode (RTD) oscillators used for high‐speed terahertz wireless communication systems have garnered significant attention in recent years. In these systems, RTD devices are directly on‐off modulated through baseband (B
Externí odkaz:
https://doaj.org/article/5f54633365a243619ff95670935c1a4a
Publikováno v:
Electronics Letters, Vol 57, Iss 25, Pp 961-963 (2021)
Abstract Design of a low cost Schottky diode based single‐balanced mixer (SBM) in full V‐band with an ultra‐wide intermediate frequency (IF) bandwidth is presented here. By loading multiple quarter‐wavelength short‐ended stubs at both radio
Externí odkaz:
https://doaj.org/article/cdd5254b640945ab87fe890b85d3739d
Autor:
Hidemasa Takahashi, Yuji Ando, Yoichi Tsuchiya, Akio Wakejima, Hiroaki Hayashi, Eiji Yagyu, Koichi Kikkawa, Naoki Sakai, Kenji Itoh, Jun Suda
Publikováno v:
Electronics Letters, Vol 57, Iss 21, Pp 810-812 (2021)
Abstract Here, a gated‐anode diode (GAD) is proposed where an anode electrode is formed by connecting a gate electrode and an ohmic electrode of a normally‐off GaN HEMT for a 5.8 GHz rectenna. A wide recessed gate GaN GADs were prepared and the r
Externí odkaz:
https://doaj.org/article/aaa4131eb892405598db2ff407ab0a62
Publikováno v:
Electronics Letters, Vol 57, Iss 6, Pp 235-237 (2021)
Abstract This letter presents an analogue predistorter (APD) named Schottky diode (SD) and field effect transistor (FET)‐paralleled APD (SDFP‐APD) for the fifth‐generation (5G) mobile system, which is composed of an FET paralleled with two SDs.
Externí odkaz:
https://doaj.org/article/c2c36b70e3b84d3681ec1c113e35c7df
Publikováno v:
Electronics Letters, Vol 57, Iss 2, Pp 83-85 (2021)
Abstract Gallium nitride based high‐power electronic devices are now in full swing. However, the phenomenon that the gallium nitride Schottky diodes break down prematurely without reaching the gallium nitride material limit is unsolved. This paper
Externí odkaz:
https://doaj.org/article/32d8f67dc1ce439988b3912291ef2c80
Akademický článek
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Publikováno v:
Electronics Letters
Electronics Letters, IET, 2000, 36 (1), pp.2-3. ⟨10.1049/el:20000119⟩
Electronics Letters, IET, 2000, 36 (1), pp.2-3. ⟨10.1049/el:20000119⟩
International audience; pin diode control is used to obtain a dual-band operation of a capacitively coupled patch antenna fed by a coplanar waveguide (CPW). The beam-lead pin diodes are inserted in the excitation slot and reduce the coupling length o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2402dec0a1e7b2fba439e9244f13e4ea
https://doi.org/10.1049/el:20000119
https://doi.org/10.1049/el:20000119