Zobrazeno 1 - 10
of 56
pro vyhledávání: '"JunHee Choi"'
Autor:
Devki D Sukhtankar, Juan José Fung, Mi-Na Kim, Thomas Cayton, Valerie Chiou, Niña G Caculitan, Piotr Zalicki, Sujeong Kim, Yoonjung Jo, SoHui Kim, Jae Min Lee, Junhee Choi, SeongGyeong Mun, Ashley Chin, Yongdae Jang, Ji Yeong Lee, Gowoon Kim, Eun Hee Kim, Won-Ki Huh, Jae-Yeon Jeong, Dong-Seung Seen, Pina M Cardarelli
Publikováno v:
PLoS ONE, Vol 18, Iss 10, p e0287863 (2023)
Autologous Stem Cell Transplant (ASCT) is increasingly used to treat hematological malignancies. A key requisite for ASCT is mobilization of hematopoietic stem cells into peripheral blood, where they are collected by apheresis and stored for later tr
Externí odkaz:
https://doaj.org/article/1ffb04feab5e4aee94fe16c155bd7935
Autor:
Kookjin Lee, Sangjin Nam, Hyunjin Ji, Junhee Choi, Jun-Eon Jin, Yeonsu Kim, Junhong Na, Min-Yeul Ryu, Young-Hoon Cho, Hyebin Lee, Jaewoo Lee, Min-Kyu Joo, Gyu-Tae Kim
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-9 (2021)
Abstract Two-dimensional (2D) layered materials such as graphene, molybdenum disulfide (MoS2), tungsten disulfide (WSe2), and black phosphorus (BP) provide unique opportunities to identify the origin of current fluctuation, mainly arising from their
Externí odkaz:
https://doaj.org/article/3e001124cfbe40af8b42a1050b945580
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-8 (2019)
Abstract In this study, we designed a smooth, highly flexible, mechanically robust poly(vinyl-butyral) (PVB)/silver nanowire (AgNW) composite transparent conducting electrode (TCE) integrated with a random nanocone (RNC) to enhance the light extracti
Externí odkaz:
https://doaj.org/article/a05a718f1c3f4dd2b14cf95b4f4bc4e7
Publikováno v:
Journal of Korean Society of Transportation. 40:289-304
Autor:
Juan Jose Fung, Valerie Chiou, Jaemin Lee, Yongdae Jang, Junhee Choi, Piotr Zalicki, Thomas Cayton, Ashley Chin, Niña Caculitan, SoHui Kim, Jiyeong Lee, Devki Sukhtankar, Eunhee Kim, Josephine Cardarelli
Publikováno v:
Blood. 140:4489-4490
Autor:
Sangwook Lee, Dong Hoon Shin, Kimmo Mustonen, Dong Su Lee, Junhee Choi, Jani Kotakoski, Clemens Mangler, Min Park, Min Hee Kwon, Hyunjeong Jeong, Heena Inani
Publikováno v:
ACS Applied Materials & Interfaces
Dynamic surface modification of suspended graphene at high temperatures was directly observed with in situ scanning transmission electron microscopy (STEM) measurements. The suspended graphene devices were prepared on a SiN membrane substrate with a
Autor:
Ji Weon Kim, Jae Geun Kim, Wanghoon Lee, Byeong Kwon Ju, Junhee Choi, Kwang Wook Choi, Ha Hwang, Jin Woo Lee, Yooji Hwang
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
Scientific Reports
Scientific Reports
Transparent conducting electrodes (TCEs) have attracted considerable attention towards the development of flexible optoelectronic devices. In this study, mixed-dimensional TCEs are fabricated based on the two-dimensional graphene and one-dimensional
Publikováno v:
Applied Surface Science. :1053-1058
With a growing interest in two-dimensional transition metal dichalcogenide (TMD), etching the structure of TMD for further application is a challenge due to its thermal stability by a high melting point. Here, we report on diverse etched structures i
Autor:
Young Jin Choi, Won G. Hong, Hyun-Seok Jang, Jeong Young Park, Gyu-Tae Kim, Jun Woo Jeon, Jae-Eun Kim, Jung Yeol Shin, Hae Jin Kim, Jonghyurk Park, Junhee Choi, Byung Hoon Kim
Publikováno v:
Nanoscale. 11:4219-4225
We report improved conductance by reducing the work function via incorporation of hydrogen into VO2 nanowires. The VO2 nanowires were prepared using the chemical vapor deposition method with V2O5 powder on silicon substrates at 850 °C. Hydrogenation
Autor:
Sangwook Lee, Kookjin Lee, Javier Diaz-Fortuny, A. Grill, Ben Kaczer, Jae Woo Lee, Gyu Tae Kim, Adrian Chasin, Erik Bury, Junhee Choi, Dong Hoon Shin, Hyeran Cho, Junhong Na, Jungu Chun, Simon Van Beek
Publikováno v:
Advanced Functional Materials, 31(23)
In this study, high-performance few-layered ReS2 field-effect transistors (FETs), fabricated with hexagonal boron nitride (h-BN) as top/bottom dual gate dielectrics, are presented. The performance of h-BN dual gated ReS2 FET having a trade-off of per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c5917717de2c625f30e79c7dc35c21e
http://resolver.tudelft.nl/uuid:82222db3-e53e-46d1-9914-61431afd5031
http://resolver.tudelft.nl/uuid:82222db3-e53e-46d1-9914-61431afd5031