Zobrazeno 1 - 10
of 510
pro vyhledávání: '"Jun-ichi Nishizawa"'
Publikováno v:
Results in Physics, Vol 6, Iss , Pp 41-42 (2016)
Reverse-biased PbSnTe/PbTe double heterojunction diodes uniquely exhibit negative resistance. This property is assumed to originate from point defects in the deep levels of the diode crystal structure. Keywords: PbTe, PbSnTe, Narrow band gap semicond
Externí odkaz:
https://doaj.org/article/4fc43479d215485fbbb60459651b36e3
Publikováno v:
Colloids and Surfaces A: Physicochemical and Engineering Aspects. 630:127551
In order to scientifically elucidate the difference in the dissolution characteristics of crystalline atorvastatin calcium (ATCH) and the amorphous ATC solids (ATC30 and ATC120) obtained by the grinding for 30 and 120 min, X-ray powder diffractometry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16c4b3214fed175698428b93540b1c69
https://doi.org/10.1016/j.colsurfa.2021.127551
https://doi.org/10.1016/j.colsurfa.2021.127551
Publikováno v:
Journal of Crystal Growth. 470:37-41
We propose the use of heavily impurity-doped Pb 1- x Sn x Te/PbTe epitaxial layers grown via the temperature difference method under controlled vapor pressure (TDM-CVP) liquid-phase epitaxy (LPE) for the preparation of IV–VI compounds for mid- to f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6174c0de452b0e88db13c2f52ac00c0b
https://doi.org/10.1016/j.jcrysgro.2017.04.010
https://doi.org/10.1016/j.jcrysgro.2017.04.010
Publikováno v:
Journal of Nanoscience and Nanotechnology. 17:5130-5133
We fabricated p–n-junction-type and Schottky barrier (SB)-type lead telluride (PbTe) mid-infrared focal plane arrays (FPAs) using a flip-chip bonder. The detection wavelength peak of the SB-type FPA shifted from 6.10 μm to 4.95 μm as the ambient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::466d738d61ce48b9c2f7606e9e71b3d8
https://doi.org/10.1166/jnn.2017.13975
https://doi.org/10.1166/jnn.2017.13975
Publikováno v:
Vibrational Spectroscopy. 85:91-96
In an attempt to provide a procedure for mode assignment in the terahertz (THz) frequency range, we fabricated an apparatus for single crystal growth via a temperature difference method to provide organic crystals that are sufficiently thin for wide-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5712ae0211ce65c6d95357e310fd35ea
https://doi.org/10.1016/j.vibspec.2016.04.003
https://doi.org/10.1016/j.vibspec.2016.04.003
Publikováno v:
Infrared Physics & Technology. 72:249-253
Bi- or In-doped n-PbTe/p-PbSnTe/Tl-doped p-PbTe double-hetero (DH) diode structures were fabricated using the temperature difference method under controlled vapour pressure (TDM-CVP) liquid-phase epitaxy (LPE). We fabricated a PbSnTe/PbTe DH-junction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbd4e8e84923c7bcc792e081d26d1d7b
https://doi.org/10.1016/j.infrared.2015.08.009
https://doi.org/10.1016/j.infrared.2015.08.009
Autor:
Feng Zhang, Michitoshi Hayashi, Houng-Wei Wang, Keisuke Tominaga, Ohki Kambara, Jun-ichi Nishizawa, Tetsuo Sasaki
Publikováno v:
Journal of Chemical Physics; 5/7/2014, Vol. 140 Issue 17, p174509-1-174509-10, 10p, 2 Diagrams, 4 Charts, 4 Graphs
Publikováno v:
Infrared Physics & Technology. 67:609-612
We fabricated a heavily Bi-doped ( x Bi ≈ 2 × 10 19 cm −3 ) PbTe p–n homojunction diode that detects mid-infrared wavelengths by the temperature difference method (TDM) under controlled vapor pressure (CVP) liquid phase epitaxy (LPE). The phot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abdc6a563d60d00db40e108d0fc80180
https://doi.org/10.1016/j.infrared.2014.10.002
https://doi.org/10.1016/j.infrared.2014.10.002
Publikováno v:
Materials Science in Semiconductor Processing. 27:159-162
PbSnTe/PbTe double hetero-diode structures were grown by temperature difference method under controlled vapor pressure (TDM–CVP) liquid-phase epitaxy (LPE). These laser diode (LD) structures were of the PbTe (Bi)/Pb1−xSnxTe/PbTe (undoped substrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84cdfede569f26b0bea92fd7aa305ac8
https://doi.org/10.1016/j.mssp.2014.06.041
https://doi.org/10.1016/j.mssp.2014.06.041
Frequency Stabilized GaP Continuous-Wave Terahertz Signal Generator for High-Resolution Spectroscopy
Publikováno v:
Optics and Photonics Journal. :8-13
We constructed a GaP continuous-wave terahertz (CW-THz) signal generator based on different frequency generation that can tune automatically from 0.15 to 6.2 THz without mode-hopping. Independent frequency feedback control for the seed laser and powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f26a25755fa8a1601df374e51204d04
https://doi.org/10.4236/opj.2014.41002
https://doi.org/10.4236/opj.2014.41002