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Autor:
Peter H. Siegel
Publikováno v:
IEEE Transactions on Terahertz Science and Technology. 5:162-169
Autor:
Toru Kurabayashi
Publikováno v:
Vacuum and Surface Science. 62:172-172
Publikováno v:
Results in Physics, Vol 6, Iss , Pp 41-42 (2016)
Reverse-biased PbSnTe/PbTe double heterojunction diodes uniquely exhibit negative resistance. This property is assumed to originate from point defects in the deep levels of the diode crystal structure. Keywords: PbTe, PbSnTe, Narrow band gap semicond
Externí odkaz:
https://doaj.org/article/4fc43479d215485fbbb60459651b36e3
Autor:
Feng Zhang, Michitoshi Hayashi, Houng-Wei Wang, Keisuke Tominaga, Ohki Kambara, Jun-ichi Nishizawa, Tetsuo Sasaki
Publikováno v:
Journal of Chemical Physics; 5/7/2014, Vol. 140 Issue 17, p174509-1-174509-10, 10p, 2 Diagrams, 4 Charts, 4 Graphs
Publikováno v:
Colloids and Surfaces A: Physicochemical and Engineering Aspects. 630:127551
In order to scientifically elucidate the difference in the dissolution characteristics of crystalline atorvastatin calcium (ATCH) and the amorphous ATC solids (ATC30 and ATC120) obtained by the grinding for 30 and 120 min, X-ray powder diffractometry
Publikováno v:
Journal of Crystal Growth. 470:37-41
We propose the use of heavily impurity-doped Pb 1- x Sn x Te/PbTe epitaxial layers grown via the temperature difference method under controlled vapor pressure (TDM-CVP) liquid-phase epitaxy (LPE) for the preparation of IV–VI compounds for mid- to f
Publikováno v:
Journal of Nanoscience and Nanotechnology. 17:5130-5133
We fabricated p–n-junction-type and Schottky barrier (SB)-type lead telluride (PbTe) mid-infrared focal plane arrays (FPAs) using a flip-chip bonder. The detection wavelength peak of the SB-type FPA shifted from 6.10 μm to 4.95 μm as the ambient
Publikováno v:
Vibrational Spectroscopy. 85:91-96
In an attempt to provide a procedure for mode assignment in the terahertz (THz) frequency range, we fabricated an apparatus for single crystal growth via a temperature difference method to provide organic crystals that are sufficiently thin for wide-
Publikováno v:
Infrared Physics & Technology. 72:249-253
Bi- or In-doped n-PbTe/p-PbSnTe/Tl-doped p-PbTe double-hetero (DH) diode structures were fabricated using the temperature difference method under controlled vapour pressure (TDM-CVP) liquid-phase epitaxy (LPE). We fabricated a PbSnTe/PbTe DH-junction