Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Jun-Yong Bak"'
Publikováno v:
IEEE Electron Device Letters. 38:1263-1265
The areal geometric effects of a ZnO charge-trap layer (CTL) on the device characteristics of a charge-trap memory thin-film transistor were investigated for embedded-memory circuit applications. While the device with a larger overlapped region betwe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce02017e828e15dffb86ee2b52e631a7
https://doi.org/10.1109/led.2017.2729578
https://doi.org/10.1109/led.2017.2729578
Autor:
Chun-Won Byun, So-Jung Kim, Min-Ki Ryu, Jae-Eun Pi, Chi-Sun Hwang, Jun Yong Bak, Sung-Min Yoon
Publikováno v:
Solid-State Electronics. 111:153-160
Device designs of charge-trap oxide memory thin-film transistors (CTM-TFTs) were investigated to enhance their nonvolatile memory performances. The first strategy was to optimize the film thicknesses of the tunneling and charge-trap (CT) layers in or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ff5aff7b8a53f6cee3a7dd0db262b18
https://doi.org/10.1016/j.sse.2015.06.003
https://doi.org/10.1016/j.sse.2015.06.003
Autor:
Jun-Yong Bak, Chi-Sun Hwang, Oh-Sang Kwon, Jae-Eun Pi, Gi Heon Kim, Sung-Min Yoon, Da-Jeong Yun, Jong-Heon Yang, Min-Ji Park, Min-Ki Ryu
Publikováno v:
Journal of Materials Chemistry C. 3:4779-4786
Amorphous indium gallium zinc oxide thin-film transistors (TFTs) were fabricated and characterized on flexible poly(ethylene naphthalate) (PEN) substrates. A hybrid inorganic/organic double-layered barrier layer structure was proposed for enhancing t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b14143b3ffabaef56167def1656fb649
https://doi.org/10.1039/c5tc00048c
https://doi.org/10.1039/c5tc00048c
Publikováno v:
IEEE Transactions on Electron Devices. 61:2404-2411
A top-gate-structured charge-trap-type memory thin-film transistors (CTM-TFTs) using In-Ga–Zn-O (IGZO) channel and ZnO charge-trap layers were proposed to investigate effects of conductivity modulation for charge-trap layers on the memory performan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45ec7f120e81f72004d84f2198e2db4c
https://doi.org/10.1109/ted.2014.2318751
https://doi.org/10.1109/ted.2014.2318751
Publikováno v:
Ceramics International. 40:7829-7836
We prepared aluminum-zinc-tin-oxide (AZTO) thin films by the solution spin-coating method and investigated their physical and electrical properties according to different incorporated amounts of Al. AZTO films annealed at 400 °C were amorphous. Thou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f067ffabbd5aa64dc09047e5f2f8f39
https://doi.org/10.1016/j.ceramint.2013.12.127
https://doi.org/10.1016/j.ceramint.2013.12.127
Publikováno v:
IEEE Transactions on Electron Devices. 61:79-86
An In-Ga-O (IGO) semiconductor was employed as a channel layer for the oxide thin-film transistors (TFTs). The IGO composition was chosen as an In/Ga atomic ratio of 65/35 and the films were deposited by RF magnetron sputtering method. To investigate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bc3ebae9a700d0648ba4cce22e47d65
https://doi.org/10.1109/ted.2013.2288264
https://doi.org/10.1109/ted.2013.2288264
Publikováno v:
ECS Journal of Solid State Science and Technology. 3:Q3005-Q3011
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::427f7af3df77b4d0fa51884a710aafd9
https://doi.org/10.1149/2.002409jss
https://doi.org/10.1149/2.002409jss
Publikováno v:
Organic Electronics. 14:2148-2157
The nonvolatile memory thin-film transistors (M-TFTs) using a solution-processed indium-zinc-titanium oxide (IZTiO) active channel and a poly(vinylidene fluoride-trifluoroethylene) ferroelectric gate insulator were fabricated and characterized to elu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84f5cc45103f6f0bff760cc930c4b0ff
https://doi.org/10.1016/j.orgel.2013.05.008
https://doi.org/10.1016/j.orgel.2013.05.008
Publikováno v:
Ceramics International. 39:2561-2566
Al–In–Zn–O thin-film transistors were fabricated. To examine the effect of In composition, we adopted a co-sputtering method using Al–Zn–O and In2O3 targets. The sputtering power of In2O3 was varied to 200, 150, and 50 W. The mobility and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54a7619abe7cd9b4a3bd72e336aa332b
https://doi.org/10.1016/j.ceramint.2012.09.016
https://doi.org/10.1016/j.ceramint.2012.09.016
Publikováno v:
ACS Applied Materials & Interfaces. 4:5369-5374
The effects of electrode materials on the device stabilities of In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) were investigated under gate- and/or drain-bias stress conditions. The fabricated IGZO TFTs with a top-gate bottom-contact structure exhibi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1070453d473158ef0c6c8955e131dc8
https://doi.org/10.1021/am301253x
https://doi.org/10.1021/am301253x