Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Jun-Yen Tewg"'
Publikováno v:
Microelectronics Reliability. 46:69-76
The dielectric breakdown property of ultrathin 2.5 and 5.0 nm hafnium oxide (HfO 2 ) gate dielectric layers with metal nitride (TaN) gate electrodes for metal oxide semiconductor (MOS) structure has been investigated. Reliability studies were perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df39cd0de9cf40434280251596f2e9bd
https://doi.org/10.1016/j.microrel.2005.02.004
https://doi.org/10.1016/j.microrel.2005.02.004
Publikováno v:
Semiconductor Science and Technology. 20:1005-1009
Changes in the current?voltage (IV) characteristics were monitored on as prepared a-Si:H pin photodiodes during 60 min He?Ne laser illumination (every 15 min in situ measurements). After illumination was over, the pin diodes were subjected to 1 h ann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86618e4e4825c97815b242223f2042d7
https://doi.org/10.1088/0268-1242/20/10/004
https://doi.org/10.1088/0268-1242/20/10/004
Publikováno v:
Vacuum. 74:539-547
A 5 A tantalum nitride (TaN x ) thin film was deposited between the Hf- or Zr-doped TaO x high dielectric constant (high- k ) film and silicon wafer to hinder the formation of the SiO x interface layer during the subsequent high-temperature annealing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94d654ded7c862685054a44a2192cae7
https://doi.org/10.1016/j.vacuum.2004.01.025
https://doi.org/10.1016/j.vacuum.2004.01.025
Publikováno v:
Scopus-Elsevier
Drastic improvement of the dielectric properties of the hafnium-doped tantalum oxide high dielectric constant thin film with the insertion of a 5 A tantalum nitride interface layer was observed. The film's breakdown strength, leakage current, and app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3440eefd05c905b05e10dc495265b3ef
https://doi.org/10.1143/jjap.42.l769
https://doi.org/10.1143/jjap.42.l769
Publikováno v:
Scopus-Elsevier
The interface layer between thin sputter-deposited tantalum oxide (TaOx) high-k film and silicon substrate was engineered with the Hf doping method and the insertion of a thin 5Å TaNx interface. The following results have been obtained: 1) the Hf do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b43c32f53bec95b4c58322df20db33e
https://doi.org/10.1557/proc-811-d3.11
https://doi.org/10.1557/proc-811-d3.11
Publikováno v:
Proceedings of the 2nd IEEE Conference on Nanotechnology.
The 2 nm interface films formed between the 10 nm thin Hf- and Zr-doped tantalum oxide high k films and Si wafer were studied. Physical and chemical properties of the interface layer were investigated with respect to the bulk film preparation conditi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::191d9996b89434187b489244409417d6
https://doi.org/10.1109/nano.2002.1032240
https://doi.org/10.1109/nano.2002.1032240
Publikováno v:
Journal of The Electrochemical Society. 153:G410
Physical and electrical properties of hafnium-doped tantalum oxide thin films were studied. The doping process affects the structures, composition, thickness, dielectric constant, charges, and leakage current density of both the bulk film and the int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20b14d7f4e992bf4d9f9a64fbabd9245
https://doi.org/10.1149/1.2180647
https://doi.org/10.1149/1.2180647
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24:349
The influence of various types of metal nitride gate electrodes, i.e., tantalum nitride, molybdenum nitride, and tungsten nitride, on electrical characteristics of metal-oxide-semiconductor capacitors with hafnium oxide as the gate dielectric materia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdff566efed86f341eda3b8fe781013e
https://doi.org/10.1116/1.2163883
https://doi.org/10.1116/1.2163883
Publikováno v:
Journal of The Electrochemical Society. 152:G617
A 5 A thick tantalum nitride (TaN x ) interface layer was inserted between an 8 nm Zr-doped tantalum oxide (TaO x ) high-k film and a silicon substrate to improve dielectric properties for metal-oxide-semiconductor (MOS) gate dielectric applications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c4c7f04a68e0361e9e7d466e77550b5
https://doi.org/10.1149/1.1945707
https://doi.org/10.1149/1.1945707
Publikováno v:
Electrochemical and Solid-State Letters. 8:G27
Metal oxide high dielectric constant materials suffer from crystallization after a high-temperature annealing step, which hinders their applications in future metal oxide semiconductor devices. We observed that when the tantalum oxide thin film was d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::284babd06e180f3f15a39a74e4edf0f5
https://doi.org/10.1149/1.1836122
https://doi.org/10.1149/1.1836122