Výsledky vyhledávání - "Jun-Xiang Pei"

Akademický článek

Voltage-Polarity Dependent Programming Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistor Memory with an Atomic-Layer-Deposited ZnO Charge Trapping Layer

Autor: Dan-Dan Liu, Wen-Jun Liu, Jun-Xiang Pei, Lin-Yan Xie, Jingyong Huo, Xiaohan Wu, Shi-Jin Ding

Publikováno v: Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-8 (2019)

Abstract Amorphous In–Ga–Zn-O (a-IGZO) thin-film transistor (TFT) memories are attracting many interests for future system-on-panel applications; however, they usually exhibit a poor erasing efficiency. In this article, we investigate voltage-pol

Externí odkaz: https://doaj.org/article/d86e1be5300846afaece6fa461c5d3f5

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Akademický článek

Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors

Autor: Lin-Yan Xie, Dong-Qi Xiao, Jun-Xiang Pei, Jingyong Huo, Xiaohan Wu, Wen-Jun Liu, Shi-Jin Ding

Publikováno v: Materials Research Express, Vol 7, Iss 4, p 046401 (2020)

Nickel oxide (NiO) thin films are prepared by plasma-enhanced atomic layer deposition using nickelocene (NiCp _2 ) and oxygen (O _2 ) precursors. The effects of process parameters on the growth rate of NiO film are investigated, including deposition

Externí odkaz: https://doaj.org/article/62b216b05ff74550a8b1640ba8b98dd3

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