Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Jun-Taek Park"'
Autor:
Kyeong Woo Lee, Hyoeng Bok Yun, Won-Seog Chong, Jin Ho Na, Jun Taek Park, Jun Cheul Ahn, Kyung Jae Shin
Publikováno v:
Korean Journal of Fisheries and Aquatic Sciences. 48:44-50
The basic and main nutritive ingredients of two temperature (Anguilla japonica and A. rostrata) and two tropical (A. bicolor pacifica and A. marmorata) fresh water eel species that are farmed domestically were evaluated. With exception of A. rostrata
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3f5156f0171df2410d40abce367c145
https://doi.org/10.5657/kfas.2015.0044
https://doi.org/10.5657/kfas.2015.0044
Publikováno v:
Japanese Journal of Applied Physics. 42:3908-3912
Making an accurate and quick critical dimension (CD) prediction is required for higher integrated device. Because simulation tools are consisted of many process parameters and models, it is hard that process parameters are optimized to match with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::504bc420f579fe8cdee8d93b122b6456
https://doi.org/10.1143/jjap.42.3908
https://doi.org/10.1143/jjap.42.3908
Autor:
Jun-Taek Park, Sunyoung Koo, Seo Min Kim, Myoung-Soo Kim, Chang-Nam Ahn, Alek C. Chen, Chang-Moon Lim, Anita Fumar-Pici
Publikováno v:
SPIE Proceedings.
Experimental local CD uniformity (LCDU) of the dense contact-hole (CH) array pattern is statistically decomposed into stochastic noise, mask component, and metrology factor. Each component are compared quantitatively, and traced after etching to find
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::930d0da35419da33be626086612de8f6
https://doi.org/10.1117/12.2048282
https://doi.org/10.1117/12.2048282
Autor:
Young-Keun Kwon, Jun-Taek Park, Ilsin An, Ji-Yong Yoo, Hye-Keun Oh, Woo-Sung Han, Dong-Soo Sohn
Publikováno v:
Japanese Journal of Applied Physics. 42:3905-3907
The threshold energy resist model based on the aerial image is less time consuming and sometimes more efficient than the full simulation model based on mathematical analysis of the whole complicated photolithography process. Moreover, this model stil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5a3e94711154ae3009c100f51ffa7a7
https://doi.org/10.1143/jjap.42.3905
https://doi.org/10.1143/jjap.42.3905
Autor:
Jongsu Lee, Hyosang Kang, Sunyoung Koo, Yoonsuk Hyun, Jun-Taek Park, Chang-Moon Lim, Myoung-Soo Kim, Seok-Kyun Kim
Publikováno v:
SPIE Proceedings.
Intra-field CD uniformity control is one of hurdles in EUV lithography. Reflection imaging system intrinsic to EUV causes CD non-uniformity especially in exposure field edge. To analyze dominant contributors to make this intra-field CD non-uniformity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baf86e7ff8b036800fa02e7545f100b8
https://doi.org/10.1117/12.916108
https://doi.org/10.1117/12.916108
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography is about to be realized in mass production even though there are many obstacles to be overcome. Several years ago, the EUV pellicle was suggested by some people, but the idea of using the EUV pellicle was abandoned by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6511a1767bde962cb63715b6e25fca5
https://doi.org/10.1117/12.918019
https://doi.org/10.1117/12.918019
Autor:
Donggyu Yim, Yongdae Kim, Chang-Moon Lim, Sungki Park, Seok-Kyun Kim, Jun-Taek Park, Sunyoung Koo, Yoonsuk Hyun
Publikováno v:
SPIE Proceedings.
EUV lithography is the leading candidate for sub-32nm half-pitch device manufacturing. EUV Pre-Production Tool (PPT) is expected to be available at the end of 2010. As EUVL era comes closer, EUVL infrastructure has to get mature including EUVL mask s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71d7d811bdc9b18ada4c89809b9ec395
https://doi.org/10.1117/12.879371
https://doi.org/10.1117/12.879371
Autor:
Sunyoung Koo, Donggyu Yim, Jun-Taek Park, Chang-Moon Lim, Yoonsuk Hyun, Sungki Park, Keundo Ban, Seok-Kyun Kim
Publikováno v:
SPIE Proceedings.
Extreme Ultra-Violet (EUV) lithography is almost only solution reachable for next-generation lithography below 30nm half pitch with relative cost competitiveness. In this study, we investigate the feasibility of EUV lithography for applying 2X nm dyn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d245584fb516cff29ef37cf210e5528
https://doi.org/10.1117/12.879450
https://doi.org/10.1117/12.879450
Autor:
Chang-Moon Lim, Sungki Park, Yongdae Kim, Donggyu Yim, Seok-Kyun Kim, Yoonsuk Hyun, Hyeong-Soo Kim, Jun-Taek Park, Sunyoung Koo, Keundo Ban
Publikováno v:
SPIE Proceedings.
Conventional EVUL mask has 80nm absorber height which brings considerable shadowing effect. H-V CD bias of 40nm line and space by shadowing effect is more than 4nm, and that is expected to increase much more for narrower patterns by simulation. Howev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4e0f4d365b206d0e20c446c3f097860
https://doi.org/10.1117/12.846506
https://doi.org/10.1117/12.846506
Autor:
Hee-Youl Lim, Jun-Taek Park, Tae-Seung Eom, Eun-Ha Lee, Seung-Hyun Hwang, Sunyoung Koo, Sungki Park, Eun-Kyoung Shin, Yoon-Jung Ryu, Hye-Jin Shin, Noh-Jung Kwak, Kyu-Tae Sun, Sarohan Park
Publikováno v:
SPIE Proceedings.
In this paper, we will present applications of MoSi-based binary intensity mask for sub-40nm DRAM with hyper-NA immersion scanner which has been the main stream of DRAM lithography. Some technical issues will be reported for polarized illumination an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54ff76899e922ee64919b860836b640f
https://doi.org/10.1117/12.846728
https://doi.org/10.1117/12.846728