Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Jun-Seok Jeong"'
Publikováno v:
IEEE Electron Device Letters. 39:995-998
This letter reports the excellent radio frequency output characteristics of AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuits (MMICs) operating at the Ka-band, employing a recessed metal–insulator–semiconductor (MIS) s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24f6de9e374135235bf6f2b7e3a4ba44
https://doi.org/10.1109/led.2018.2834223
https://doi.org/10.1109/led.2018.2834223
Publikováno v:
Journal of the Korean Physical Society. 71:711-716
Oscillatory dependence of tunneling conductance on the barrier thickness is investigated theoretically for the metal/insulator/metal junctions. The tunneling transmission is expressed with the reflection and the transmission amplitudes of each separa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1e244f6070f3d82dc75950a05873a24
https://doi.org/10.3938/jkps.71.711
https://doi.org/10.3938/jkps.71.711
Publikováno v:
Journal of the Korean Physical Society. 71:697-700
In this study, we investigated the effects of highly doped carbon (C) buffer on the microwave performance of AlGaN/GaN-on-Si high electron mobility transistor (HEMT).We fabricated AlGaN/GaN-on-Si HEMTs with two different buffer structures. One struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a3208c5d4ff98f5902feb2ce5160a0d
https://doi.org/10.3938/jkps.71.697
https://doi.org/10.3938/jkps.71.697
Autor:
Hyuk Kee Sung, Chang Heon Yang, Myunglae Jo, Jae-Gil Lee, Hunwoo Lee, Byongju Kim, Ju Ho Lee, Jeong Hyun Moon, Guna Kim, Jihoon Jeong, B. C. Lee, Jongmin Lee, Sohyun Ahn, Dong Hee Shin, Kwang-Seok Seo, Sung Un Cho, Sang Hoon Lee, Inho Jeong, Rena Lee, Hyun Soo Kim, Yeon Jung Kim, Kang Seog Lee, Jun Seok Jeong, Youngman Kim, Jin Hyuck Heo, Jingtai Cao, Xiaohui Zhao, Hyunchul Jang, Dongyeon Lee, Jang Bo Shim, Kyuseok Kim, Sangwook Lim, Chun Hyung Cho, Sang Cheol Kim, Sangmo Koo, June Won Hyun, Sang Hyuk Im, Suk Lee, Ho-Young Cha, Kimin Hong, Ogyun Seok, Wook Bahng, Kwang Jun Ahn, Gang Bae Kim, Hee-Cheol Kim, Moon Kyong Na, Seok Kim, Kyungil Kim, Ashadun Nobi, Jong Hoon Jung, Hyunwook Song, Haijun Gu, Hyosung Cho, Nam-Kyun Kim, Soyoung Park, Sang Goon Kim, Minsik Lee, Geon Joon Lee, Hyun Do Huh, Seokyoon Kang, Him Chan Park, Dae Hong Ko, Su Keun Eom, In Ho Kang, Yoo Seung Hong, Seung-Bo Shim, Hyunwoo Lim, Yun Daniel Park, Seryeyohan Cho, Wei Liu, Sungwan Cho, Seran Park, Dong-Hwan Kim, Zhaokun Li, Young Joon Ko, Gyungsoon Park, Seungjin Hwang, Kyubo Kim, Chulkyu Park, Tae Jun Yu, Eun Ha Choi, Kang Il Lee, Uikyu Je, Samju Cho, Jae Woo Lee, Hyoung Wook Kim, Changwoo Seo
Publikováno v:
Journal of the Korean Physical Society. 71:1075-1075
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46181b11ca244bd2a077e24fa8ff20b3
https://doi.org/10.3938/jkps.71.1075
https://doi.org/10.3938/jkps.71.1075
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35:060601
The effect that insertion gate metals have on GaN millimeter-wave devices undergoing a postmetallization annealing (PMA) process was investigated. It was found that the PMA process increases the gate resistance (Rg), which is responsible for a decrea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e8a925820ca1aeef7ba98710b8ff879
https://doi.org/10.1116/1.4998310
https://doi.org/10.1116/1.4998310
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34:040602
This letter reports an AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuit (MMIC) operating at V-band using advanced gate processing technology. The AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) employed a gate l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9705f9e40b0966197b4f419f1431ece9
https://doi.org/10.1116/1.4947005
https://doi.org/10.1116/1.4947005
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Jul/Aug2016, Vol. 34 Issue 4, p1-4, 4p