Výsledky vyhledávání - "Jun-Hyung Lim"

Akademický článek

Double-gate metal–oxide TFT pixel circuit for improved luminance uniformity of mobile OLED display

Autor: YiKyoung You, Kook Chul Moon, HyeongMin Kim, JungSuk Oh, SangWoon Lee, Jun Hyung Lim, Kyoung Seok Son, JaeHyung Cho, KeeChan Park

Publikováno v: Journal of Information Display, Pp 1-9 (2024)

The small subthreshold swing (SS) of metal–oxide (MOx) thin-film transistors (TFTs) reduces the data voltage (VDAT) range of the organic light-emitting diode (OLED) display pixel circuit. This leads to a large OLED current error when a small change

Externí odkaz: https://doaj.org/article/0c0ffd38b8124213846fc4510a4747e6

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Akademický článek

Optimizing Length Scalability of InGaZnO Thin‐Film Transistors through Lateral Carrier Profile Engineering and Negative ΔL Extension Structure

Autor: Su Hyun Kim, Mingoo Kim, Ji Hwan Lee, Kihwan Kim, Joon Seok Park, Jun Hyung Lim, Saeroonter Oh

Publikováno v: Advanced Electronic Materials, Vol 10, Iss 10, Pp n/a-n/a (2024)

Abstract The lateral carrier profile of amorphous indium gallium zinc oxide (IGZO) thin‐film transistors (TFTs) plays a significant role in determining the effective channel length (Leff) and length scalability even when the physical gate length (L

Externí odkaz: https://doaj.org/article/6362fcee3acb428ba41032f741a6b9d6

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Akademický článek

Quantitative analysis of defect states in InGaZnO within 2 eV below the conduction band via photo-induced current transient spectroscopy

Autor: Hyunmin Hong, Min Jung Kim, Dong-Joon Yi, Yeon-Keon Moon, Kyoung-Seok Son, Jun Hyung Lim, KwangSik Jeong, Kwun-Bum Chung

Publikováno v: Scientific Reports, Vol 13, Iss 1, Pp 1-10 (2023)

Abstract This work investigates the function of the oxygen partial pressure in photo-induced current measurement of extended defect properties related to the distribution and quantity of defect states in electronic structures. The Fermi level was adj

Externí odkaz: https://doaj.org/article/f32d2ba64d314fc9a0e175f6c6187356

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Akademický článek

Exploration of Chemical Composition of In–Ga–Zn–O System via PEALD Technique for Optimal Physical and Electrical Properties

Autor: TaeHyun Hong, Yoon‐Seo Kim, Su‐Hwan Choi, Jun Hyung Lim, Jin‐Seong Park

Publikováno v: Advanced Electronic Materials, Vol 9, Iss 4, Pp n/a-n/a (2023)

Abstract In–Ga–Zn–O (IGZO) material has been researched due to its favorable electrical characteristics for application in thin‐film transistor (TFT) applications such as low off current and relatively high mobility. However, most recently, a

Externí odkaz: https://doaj.org/article/f2eba353224f4348bbacc4969ed637a4

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Akademický článek

High-performance hysteresis-free perovskite transistors through anion engineering

Autor: Huihui Zhu, Ao Liu, Kyu In Shim, Haksoon Jung, Taoyu Zou, Youjin Reo, Hyunjun Kim, Jeong Woo Han, Yimu Chen, Hye Yong Chu, Jun Hyung Lim, Hyung-Jun Kim, Sai Bai, Yong-Young Noh

Publikováno v: Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)

Progress on high-performance transistor employing perovskite channels has been limited to date. Here, Zhu et al. report hysteresis-free tin-based perovskite thin-film transistors with high hole mobility of 20 cm2V–1S–1, which can be integrated wi

Externí odkaz: https://doaj.org/article/ab63e218e8334f269fa0556fee8dedb4

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