Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Jun-Huei Lin"'
Autor:
Cheng-Yen Chien, Wen-Hsin Wu, Yao-Hong You, Jun-Huei Lin, Chia-Yu Lee, Wen-Ching Hsu, Chieh-Hsiung Kuan, Ray-Ming Lin
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-5 (2017)
Abstract We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We
Externí odkaz:
https://doaj.org/article/520556ee952e472dbd0197637f946e44
Autor:
Jun-Huei Lin, 林鈞暉
104
AlGaN/GaN heterojunction has outstanding carrier transport property and high electron mobility because of the existence of two-dimensional electron gas with high concentration, and we can apply to high-power and high-frequency circuit opera
AlGaN/GaN heterojunction has outstanding carrier transport property and high electron mobility because of the existence of two-dimensional electron gas with high concentration, and we can apply to high-power and high-frequency circuit opera
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/65466782079927336061
Autor:
Chia-Yu Lee, Chieh-Hsiung Kuan, Ray-Ming Lin, Cheng-Yen Chien, Wen-Hsin Wu, Wen-Ching Hsu, Yao-Hong You, Jun-Huei Lin
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-5 (2017)
Nanoscale Research Letters
Nanoscale Research Letters
We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fdbd96f5ef13a0c23d0d820530c9cf00
http://link.springer.com/article/10.1186/s11671-017-2189-3
http://link.springer.com/article/10.1186/s11671-017-2189-3