Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Jun-Ho Byun"'
Publikováno v:
Electronic Materials, Vol 5, Iss 2, Pp 71-79 (2024)
In this study, the bipolar switching behaviors in ZnO/HfO2 bilayer resistive random-access memory (RRAM), depending on different metal top electrodes (TE), are analyzed. For this purpose, devices with two types of TE–TiN/Ti and Pd, which have varyi
Externí odkaz:
https://doaj.org/article/7f1d2e2702db47329b8c91f4fd01f394
Publikováno v:
Sensors, Vol 22, Iss 22, p 8907 (2022)
In this study, a bottom-gated ZnO thin film transistor (TFT) pressure sensor with nanorods (NRs) is suggested. The NRs are formed on a planar channel of the TFT by hydrothermal synthesis for the mediators of pressure amplification. The fabricated dev
Externí odkaz:
https://doaj.org/article/8c197258a688469cb18366da9551adee
Publikováno v:
Micromachines, Vol 12, Iss 11, p 1316 (2021)
In this study, the deuterium passivation effect of silicon nitride (Si3N4) on data retention characteristics is investigated in a Metal-Nitride-Oxide-Silicon (MNOS) memory device. To focus on trap passivation in Si3N4 as a charge trapping layer, deut
Externí odkaz:
https://doaj.org/article/9de899bdf1e04bddb3e48ab30e7ddd08
Publikováno v:
Journal of implantology and applied sciences. 26:120-127
Autor:
Ki-Nam Kim, Woon-San Ko, Jun-Ho Byun, Do-Yeon Lee, Eun-Gi Kim, Eun-A Koo, So-Yeon Kwon, Ga-Won Lee
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Autor:
Woon-San Ko, Myeong Ho Song, Ki-Nam Kim, Jun-Ho Byun, Do-Yeon Lee, Eun-gi Kim, Eun-A Koo, So-Yeon Kwon, Geun-Ho Kim, Dong-Hyeuk Choi, Ga-Won Lee
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Autor:
Jun-Ho Byun, Woon-San Ko, Ki-Nam Kim, Do-Yeon Lee, Eun-Gi Kim, Eun-A Koo, So-Yeon Kwon, Ga-Won Lee
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Publikováno v:
Micromachines
Micromachines, Vol 12, Iss 1316, p 1316 (2021)
Volume 12
Issue 11
Micromachines, Vol 12, Iss 1316, p 1316 (2021)
Volume 12
Issue 11
In this study, the deuterium passivation effect of silicon nitride (Si3N4) on data retention characteristics is investigated in a Metal-Nitride-Oxide-Silicon (MNOS) memory device. To focus on trap passivation in Si3N4 as a charge trapping layer, deut
Isolation of human mesenchymal stem cells from the skin and their neurogenic differentiationin vitro
Autor:
Seong-Cheol Park, Gyu-Jin Rho, Eun Ju Kang, Mun Jeong Choi, Bong Wook Park, Jun Ho Byun, Dong-Ho Kang
Publikováno v:
Journal of the Korean Association of Oral and Maxillofacial Surgeons. 38:343
Objectives: This aim of this study was to effectively isolate mesenchymal stem cells (hSMSCs) from human submandibular skin tissues (termed hSMSCs) and evaluate their characteristics. These hSMSCs were then chemically induced to the neuronal lineage