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of 4
pro vyhledávání: '"Jun-Hau Wang"'
Autor:
Jun-Hau Wang, 王均浩
99
RF magnetron sputtering has been employed to deposit n-type epitaxial zinc oxide thin films on p-type silicon substrates to form p-n diode structures. Commonly found on silicon, native SiOx layers, typically of a few nanometer thick, would hi
RF magnetron sputtering has been employed to deposit n-type epitaxial zinc oxide thin films on p-type silicon substrates to form p-n diode structures. Commonly found on silicon, native SiOx layers, typically of a few nanometer thick, would hi
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/55985075837166149449
Autor:
P.V. Wadekar, Ching-Wen Chang, Hua-Hsien Liao, Chun-Fu Chang, Hui-Chun Huang, Jun-Hau Wang, Jyun-Jie Lin, Hye-Won Seo, New-Jin Ho, Chih-Hsiung Liao, Li-Wei Tu, Wanchen Hsieh, Wei-Kan Chu, Yu-Sheng Wang, Wen-Yen Lin, Quark Y. Chen
Publikováno v:
AIP Advances. 6:075018
Low-leakage pin diodes based on ZnO-i-Si are realized by redox reaction of aluminum with the native oxide SiOx into AlOx and by proper selection of annealing conditions. The main sources of electric leakage was found to arise from charge carrier tunn
Autor:
Li-Wei Tu, Jun-Hau Wang, Hua Hsien Liao, Dharshana Wijesundera, Guo-Sin Huang, Quark Y. Chen, Chun-Fu Chang, New-Jin Ho, Chih-Hsiung Liao, Hui-Chun Huang, Jin-Jie Lin, Wei-Kan Chu, P.V. Wadekar
Publikováno v:
2012 38th IEEE Photovoltaic Specialists Conference.
RF magnetron sputtering has been employed to deposit n-type epitaxial zinc oxide thin films on p-type silicon substrates to form p-n diode structures. Native SiOx layers, Commonly found on silicon, typically of a few nanometer thick, would hinder the
Autor:
Chun-Fu Chang, Wadekar, Paritosh V., Wan-Chen Hsieh, Wen-Yen Lin, Yu-Sheng Wang, Jun-Hau Wang, Jyun-Jie Lin, Hui-Chun Huang, Ching-Wen Chang, Li-Wei Tu, Chih-Hsiung Liao, Hua-Hsien Liao, New-Jin Ho, Hye-Won Seo, Chen, Quark Y., Wei-Kan Chu
Publikováno v:
AIP Advances; 2016, Vol. 6 Issue 7, p075018-1-075018-8, 8p