Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Jun-De Jin"'
Autor:
Jun-De Jin, Ying-Ta Lu
Publikováno v:
2019 IEEE MTT-S International Microwave Symposium (IMS).
Today, sub-0.1 V and sub-0.1 mW VCO is not available mainly due to inductor/transistor limitations. Here, the designed 5-GHz VCO using the proposed L/Q-booster demonstrated a P DC of 0.051 mW, and achieved a FoM of 190 dBc/Hz at 0.1 V supply voltage.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::545e2391e5b51b73b21e674ec582cc34
https://doi.org/10.1109/mwsym.2019.8700785
https://doi.org/10.1109/mwsym.2019.8700785
Autor:
Ying-Ta Lu, Jun-De Jin
Publikováno v:
2016 IEEE MTT-S International Microwave Symposium (IMS).
To achieve both ultra-low-voltage (ULV) and ultra-low-power (ULP), we adopted the sub-threshold design on gate and near-triode design on drain terminals. The proposed low-noise amplifier (LNA) achieves a power gain of 6.9 dB and a noise figure (NF) o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed312a2d74385abfadb72fdca696f2f7
https://doi.org/10.1109/mwsym.2016.7540298
https://doi.org/10.1109/mwsym.2016.7540298
Publikováno v:
Measurement. 42:290-297
Ferromagnetic resonance for magnetic thin films is found to be coexisted with the trans- mission resonance of a T-type microwave microstrip at certain applied magnetic fields. The frequency dependence of conductivity, the magnetization, and the magne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85707d7bb0dfcdcd3d154edf1479fd4a
https://doi.org/10.1016/j.measurement.2008.06.012
https://doi.org/10.1016/j.measurement.2008.06.012
Autor:
Jun-De Jin, Shawn S. H. Hsu
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 56:3086-3092
A 70-GHz broadband amplifier is realized in a 0.13- mum CMOS technology. By using five cascaded common- source stages with the proposed asymmetric transformer peaking technique, the measured bandwidth and gain can reach 70.6 GHz and 10.3 dB under a p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::414b46458124466f0988e04503ae0ae0
https://doi.org/10.1109/tmtt.2008.2007089
https://doi.org/10.1109/tmtt.2008.2007089
Autor:
Shawn S. H. Hsu, Jun-De Jin
Publikováno v:
IEEE Journal of Solid-State Circuits. 43:440-445
A 24-GHz balanced amplifier (BA) with a 45-dB gain is realized in 0.18-mum CMOS technology. An effective technique, pi-type parallel resonance, is proposed to boost the high-frequency gain of a MOSFET by resonating out the inherent capacitances. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1ac225aa75313683020ea3027cc3edd
https://doi.org/10.1109/jssc.2007.914292
https://doi.org/10.1109/jssc.2007.914292
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 54:750-754
A fully integrated frequency divider with an operation frequency up to 20 GHz is designed in 0.18-mum CMOS technology. The frequency divider includes two stages to divide the input signal by a factor of 4. A wide locking range from 18.8 to 23.2 GHz w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4ef27aacd682c86c757ba28436a6c2d
https://doi.org/10.1109/tcsii.2007.901258
https://doi.org/10.1109/tcsii.2007.901258
Publikováno v:
2015 Asia-Pacific Symposium on Electromagnetic Compatibility (APEMC).
By co-design methodology, an integrated 2.4 GHz band-pass filter using grounded spiral inductors symmetrically at input/output ports for ESD protection is realized in integrated passive device (IPD) technology. With the novel input/output admittance-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb977e2bcc7fcf1d4e3e620c2f731154
https://doi.org/10.1109/apemc.2015.7175265
https://doi.org/10.1109/apemc.2015.7175265
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 54:4333-4340
Design, characterization, and modeling of differential semicoaxial interconnects based on a standard 0.18-mum CMOS process are presented for the first time. The differential semicoaxial line shows a low differential-mode attenuation constant of ~1.00
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3be7d7a636f621c6664e01600e3aedf1
https://doi.org/10.1109/tmtt.2006.886000
https://doi.org/10.1109/tmtt.2006.886000
Publikováno v:
IEEE Microwave and Wireless Components Letters. 22:197-199
An ultra-low-power 60 GHz low-noise amplifier (LNA) with a 12.5 dB peak gain and a 5.4 dB minimum NF is demonstrated in a 90 nm CMOS technology. The LNA is composed of four cascaded common-source stages with the gate-source transformer feedback appli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a7415ad8cf9c426e67bcaeb9d0bfbc4
https://doi.org/10.1109/lmwc.2012.2187883
https://doi.org/10.1109/lmwc.2012.2187883
Publikováno v:
Thin Solid Films. :345-349
Optical second harmonic generation (SHG) has been used to analyze the ULSI process, including low energy ion-implantation and rapid thermal annealing (RTA). The projected range of the low energy ion-implantation is approximately 20 nm, which results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1637c90f2c4a7ad9ee3b3a5ef7a2440
https://doi.org/10.1016/s0040-6090(02)00938-0
https://doi.org/10.1016/s0040-6090(02)00938-0